18440348. ASYMMETRIC TRANSISTOR DEVICES simplified abstract (Micron Technology, Inc.)
Contents
ASYMMETRIC TRANSISTOR DEVICES
Organization Name
Inventor(s)
Srinivas Pulugurtha of Boise ID (US)
Dan Mihai Mocuta of Boise ID (US)
ASYMMETRIC TRANSISTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18440348 titled 'ASYMMETRIC TRANSISTOR DEVICES
Simplified Explanation: The patent application describes an apparatus with asymmetric transistor devices that have one or more pairs of transistors sharing a common source region. Tilted implantation is used to extend the drain junction depth without additional masking.
Key Features and Innovation:
- Asymmetric transistor devices with shared common source region
- Tilted implantation for extending drain junction depth
- No additional masks needed for doping drain region
Potential Applications:
- Integrated circuits
- Semiconductor devices
- Power management systems
Problems Solved:
- Simplifying transistor device fabrication
- Improving performance of semiconductor devices
- Enhancing power efficiency in circuits
Benefits:
- Increased efficiency in transistor devices
- Cost-effective manufacturing process
- Enhanced performance in electronic systems
Commercial Applications: Semiconductor companies can utilize this technology to improve the efficiency and performance of their integrated circuits, leading to better products for consumers and potentially opening up new market opportunities in various industries.
Prior Art: Researchers can explore prior patents related to asymmetric transistor devices and tilted implantation techniques to understand the evolution of this technology and potential areas for further innovation.
Frequently Updated Research: Researchers in the field of semiconductor technology may be conducting ongoing studies on the optimization of transistor devices and implantation techniques to enhance performance and efficiency in electronic systems.
Questions about Asymmetric Transistor Devices: 1. How does the use of tilted implantation impact the performance of asymmetric transistor devices? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Question 1: What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Answer 1: One potential challenge in implementing this technology in large-scale semiconductor manufacturing processes could be ensuring uniformity and consistency in the tilted implantation process across a large number of transistors. Variations in the implantation angle or depth could lead to inconsistencies in device performance, requiring precise control and calibration during fabrication.
Question 2: How does the use of tilted implantation impact the performance of asymmetric transistor devices?
Answer 2: Tilted implantation allows for the extension of the drain junction depth without the need for additional masking, which can improve the overall performance and efficiency of asymmetric transistor devices. By controlling the implantation angle and depth, manufacturers can tailor the characteristics of the transistors to meet specific requirements for different applications, leading to enhanced functionality and reliability in electronic systems.
Original Abstract Submitted
A variety of applications can include an apparatus having one or more pairs of transistors sharing a common source region that provide asymmetric transistor devices. The drains of the transistors of a pair sharing a common source region can be structured with the source junction depth being shallower than the drain junction depth of the drain region of at least one of the transistors of the pair. Tilted implantation can be used to extend a drain junction depth beyond the distance of the source junction depth by implanting additional dopants. The extension of the drain junction depth can be accomplished without additional masks being used in processing to dope only a drain region and skip doping on a corresponding source region.
