18438951. IMAGE SENSORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Jonghyun Go of Seongnam-si (KR)
Jae-Kyu Lee of Seongnam-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18438951 titled 'IMAGE SENSORS
Simplified Explanation: The patent application describes an image sensor design that includes a pixel area with a photodiode and a transistor area with various types of transistors. The transistors in the transistor area are positioned along the edge of the pixel area, with some sharing common drain or source areas.
- The image sensor includes a pixel area with a photodiode and a floating diffusion area.
- The transistor area adjacent to the pixel area contains transistors such as reset transistors, source follower transistors, and selection transistors.
- The reset transistor and one source follower transistor share a common drain area.
- The source follower transistors and selection transistors each share a common source or drain area between adjacent transistors.
Potential Applications: 1. Security cameras 2. Surveillance systems 3. Automotive cameras 4. Medical imaging devices
Problems Solved: 1. Efficient area securing in image sensors 2. Improved pixel and transistor layout for better performance 3. Enhanced functionality and reliability in image capturing devices
Benefits: 1. Higher quality image capture 2. Improved sensor performance 3. Enhanced security features 4. Increased reliability and durability
Commercial Applications: The technology can be utilized in various industries such as security, automotive, medical, and consumer electronics for developing advanced imaging devices with improved performance and functionality.
Prior Art: There may be existing patents or publications related to image sensor designs with similar features, but further research is needed to determine specific prior art in this field.
Frequently Updated Research: Stay updated on the latest advancements in image sensor technology, particularly in the areas of pixel and transistor design for improved performance and functionality.
Questions about Image Sensor Technology: 1. How does the shared drain or source area between transistors in the image sensor design impact overall performance? 2. What are the potential challenges in implementing this innovative image sensor design in commercial products?
Original Abstract Submitted
An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.
