18438687. METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE simplified abstract (HAMAMATSU PHOTONICS K.K.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE
Organization Name
Inventor(s)
Atsushi Sugiyama of Hamamatsu-shi (JP)
Keita Furuoka of Hamamatsu-shi (JP)
Satoru Okawara of Hamamatsu-shi (JP)
Takehito Nagakura of Hamamatsu-shi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18438687 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE
The method for manufacturing a semiconductor laser device involves preparing a wafer, forming a device dividing groove, creating a cleavage introducing groove, cleaving the wafer to obtain laser bars, and cleaving each laser bar along the device dividing line.
- Device dividing groove is not formed on the cleavage line.
- Cleavage introducing groove is formed only outside the device region or has a longer length outside the device region compared to inside.
Potential Applications: - Semiconductor laser manufacturing - Optoelectronic devices - Telecommunications industry
Problems Solved: - Efficient and precise manufacturing of semiconductor laser devices - Facilitates cleaving process for laser bars
Benefits: - Improved production efficiency - Enhanced device performance - Cost-effective manufacturing process
Commercial Applications: - Semiconductor industry - Laser technology companies - Research institutions
Questions about the technology: 1. How does the method improve the cleaving process for semiconductor laser devices? 2. What are the advantages of forming the cleavage introducing groove outside the device region?
Frequently Updated Research: - Ongoing research on optimizing cleaving processes for semiconductor laser devices - Advancements in semiconductor laser technology and manufacturing techniques.
Original Abstract Submitted
A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer, a second step of forming a device dividing groove by etching, a third step of forming a cleavage introducing groove at a position overlapping a cleavage line, a fourth step of obtaining a plurality of laser bars by cleaving the wafer along the cleavage line, and a fifth step of cleaving each of the plurality of laser bars along the device dividing line. In the second step, the device dividing groove is not formed on the cleavage line. In the third step, the cleavage introducing groove is formed only outside a device region, or a length of a portion of the cleavage introducing groove included outside the device region is longer than a length of a portion of the cleavage introducing groove included inside the device region.
