18438633. IMAGING DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 IMAGING DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGING DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Solid-State Imaging Devices
- 1.13 Original Abstract Submitted
IMAGING DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Yuki Okamoto of Sagamihara (JP)
Yoshiyuki Kurokawa of Sagamihara (JP)
IMAGING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18438633 titled 'IMAGING DEVICE
Simplified Explanation
This patent application describes a solid-state imaging device with high productivity and improved dynamic range. The device includes a photoelectric conversion element with an i-type semiconductor layer, functional elements, and wiring. The overlap area of the functional elements and wiring with the i-type semiconductor layer is minimized to enhance performance.
Key Features and Innovation
- Photoelectric conversion elements with i-type semiconductor layers are optimized to reduce overlap with functional elements and wiring.
- Plural photoelectric conversion elements are integrated into the same semiconductor layer, simplifying the separation process.
- Separation between i-type semiconductor layers in plural photoelectric conversion elements is achieved using p-type or n-type semiconductor layers.
Potential Applications
This technology can be applied in various imaging devices, such as digital cameras, smartphones, and medical imaging equipment.
Problems Solved
- Enhanced productivity and dynamic range in solid-state imaging devices.
- Simplified process for integrating and separating photoelectric conversion elements.
Benefits
- Improved performance and efficiency in imaging devices.
- Reduction in manufacturing complexity and cost.
Commercial Applications
- This technology can be utilized in the consumer electronics industry for developing advanced imaging products with superior performance and image quality.
Prior Art
Readers can explore prior patents related to solid-state imaging devices, semiconductor technologies, and photoelectric conversion elements to understand the evolution of this technology.
Frequently Updated Research
Stay updated on advancements in semiconductor materials, imaging sensor technologies, and manufacturing processes to enhance the performance of solid-state imaging devices.
Questions about Solid-State Imaging Devices
What are the key advantages of using i-type semiconductor layers in photoelectric conversion elements?
Using i-type semiconductor layers helps improve the efficiency and sensitivity of photoelectric conversion elements, leading to enhanced image quality and dynamic range.
How does the integration of plural photoelectric conversion elements benefit the overall performance of the imaging device?
Integrating plural photoelectric conversion elements allows for more efficient use of space and resources, resulting in compact devices with improved functionality and image capture capabilities.
Original Abstract Submitted
A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.
