18437321. DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuei-Ming Chen of New Taipei City (TW)
Chi-Ming Chen of Zhubei City (TW)
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18437321 titled 'DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
The abstract of this patent application describes an integrated chip with a first transistor on a semiconductor substrate, featuring diffusion barrier structures co-doped with different dopants to control doping concentrations.
- The integrated chip includes a first transistor with a first gate structure, a first pair of source/drain regions, and diffusion barrier structures.
- The first pair of source/drain regions contains a higher doping concentration of the first dopant compared to the diffusion barrier structures.
- The diffusion barrier structures are co-doped with the first dopant and a second dopant to optimize the performance of the transistor.
- By controlling the doping concentrations in different regions of the transistor, the overall efficiency and reliability of the chip can be improved.
- This innovative design allows for better control of the electrical properties of the transistor, leading to enhanced overall performance.
Potential Applications: - This technology can be applied in the development of advanced integrated circuits for various electronic devices. - It can be utilized in the manufacturing of high-performance computing systems, mobile devices, and other semiconductor-based products.
Problems Solved: - Addresses the need for improved control over doping concentrations in different regions of a transistor. - Enhances the efficiency and reliability of integrated chips by optimizing the electrical properties of the transistors.
Benefits: - Improved performance and reliability of integrated chips. - Enhanced control over electrical properties for better overall functionality. - Potential for increased efficiency and reduced power consumption in electronic devices.
Commercial Applications: - The technology can be used in the production of next-generation semiconductor devices for a wide range of consumer electronics and industrial applications. - It has the potential to drive innovation in the semiconductor industry and improve the performance of electronic products in the market.
Questions about the technology: 1. How does the co-doping of diffusion barrier structures with different dopants impact the performance of the transistor? 2. What are the specific advantages of controlling doping concentrations in different regions of the transistor for integrated chip design?
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an integrated chip including a first transistor on a semiconductor substrate. The first transistor includes a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the first pair of source/drain regions and a lower region of the semiconductor substrate. The first pair of source/drain regions comprise a first dopant. The diffusion barrier structures are co-doped with the first dopant and a second dopant different from the first dopant. A doping concentration of the first dopant within the first pair of source/drain regions is greater than a doping concentration of the first dopant within the diffusion barrier structures.
