18437130. APPARATUS AND METHODS FOR GENERATING A CIRCUIT WITH HIGH DENSITY ROUTING LAYOUT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

APPARATUS AND METHODS FOR GENERATING A CIRCUIT WITH HIGH DENSITY ROUTING LAYOUT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-An Lai of Hsinchu City (TW)

Shih-Wei Peng of Hsinchu City (TW)

Wei-Cheng Lin of Taichung City (TW)

Jiann-Tyng Tzeng of Hinchu City (TW)

APPARATUS AND METHODS FOR GENERATING A CIRCUIT WITH HIGH DENSITY ROUTING LAYOUT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18437130 titled 'APPARATUS AND METHODS FOR GENERATING A CIRCUIT WITH HIGH DENSITY ROUTING LAYOUT

Simplified Explanation

The patent application describes apparatus and methods for generating a physical layout for a high-density routing circuit in a semiconductor structure. The structure includes gate structures, metal lines, and vias formed in multiple dielectric layers to enable electrical connections between different components.

• Gate structure with metal lines and vias:

 * The semiconductor structure includes a gate structure with multiple metal lines formed in different dielectric layers.
 * Vias are formed between the metal lines in the dielectric layers to establish electrical connections.

• Electrical connections:

 * First vias connect the gate structure to the first metal lines in a lower dielectric layer.
 * Second vias connect the gate structure to the second metal lines in a higher dielectric layer.

• Simplified explanation:

 * The patent application discloses a semiconductor structure with gate structures, metal lines, and vias in multiple dielectric layers for high-density routing circuits.

Potential Applications

The technology described in the patent application could be applied in the development of advanced semiconductor devices, such as high-performance integrated circuits and microprocessors.

Problems Solved

This technology helps in achieving high-density routing circuits in semiconductor structures, enabling efficient electrical connections between different components while minimizing space requirements.

Benefits

The benefits of this technology include improved circuit density, enhanced electrical connectivity, and optimized physical layout for semiconductor devices.

Potential Commercial Applications

• Optimizing Physical Layout for High-Density Routing Circuits in Semiconductor Structures

Possible Prior Art

There may be prior art related to the use of vias and metal lines in semiconductor structures for electrical connections. However, specific details would need to be researched to identify relevant prior art.

How does this technology impact the overall performance of semiconductor devices?

The article does not provide information on how the described technology affects the performance metrics of semiconductor devices, such as speed, power consumption, or reliability.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?

The article does not address the potential challenges that may arise when scaling up the implementation of this technology in semiconductor manufacturing processes, such as cost implications, production complexity, or yield rates.

Original Abstract Submitted

Apparatus and methods for generating a physical layout for a high density routing circuit are disclosed. An exemplary semiconductor structure includes: a gate structure; a plurality of first metal lines formed in a first dielectric layer below the gate structure; at least one first via formed in a second dielectric layer between the gate structure and the first dielectric layer; a plurality of second metal lines formed in a third dielectric layer over the gate structure; and at least one second via formed in a fourth dielectric layer between the gate structure and the third dielectric layer. Each of the at least one first via is electrically connected to the gate structure and a corresponding one of the plurality of first metal lines. Each of the at least one second via is electrically connected to the gate structure and a corresponding one of the plurality of second metal lines.