18437038. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Masayuki Akou of Yokohama (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18437038 titled 'SEMICONDUCTOR STORAGE DEVICE
The semiconductor storage device described in the abstract includes various components such as word line selection transistors, insulating film, and voltage supply circuits.
- The device has a first word line connected to a gate of a first memory cell transistor and a second word line connected to a gate of a second memory cell transistor.
- It also includes first and second word line selection transistors capable of supplying voltage from a voltage supply circuit to the respective word lines.
- An insulating film is provided between the word line selection transistors to prevent interference.
- A first wiring extends in a first direction on the insulating film and is capable of receiving a voltage lower than ground voltage from the voltage supply circuit.
Potential Applications: - This technology can be used in various semiconductor storage devices such as flash memory. - It can also be applied in other types of memory systems requiring efficient voltage supply to word lines.
Problems Solved: - The technology addresses the need for precise voltage supply to word lines in semiconductor storage devices. - It solves the issue of interference between word line selection transistors.
Benefits: - Improved performance and reliability of semiconductor storage devices. - Enhanced efficiency in voltage supply to word lines. - Reduction in interference and crosstalk between components.
Commercial Applications: Title: Advanced Semiconductor Storage Devices for Enhanced Memory Systems This technology can be utilized in the production of high-performance memory systems for consumer electronics, data storage, and computing devices. It can lead to more reliable and faster memory solutions, catering to the growing demand for efficient data storage and processing.
Questions about Semiconductor Storage Devices: 1. How does the insulating film contribute to the performance of the semiconductor storage device? The insulating film helps prevent interference between the word line selection transistors, ensuring efficient voltage supply to the word lines. 2. What are the potential advancements in semiconductor storage devices that can be achieved using this technology? This technology can lead to improved speed, reliability, and efficiency in semiconductor storage devices, enhancing overall performance and user experience.
Original Abstract Submitted
A semiconductor storage device according to an embodiment includes a first word line connected to a gate of a first memory cell transistor, a second word line connected to a gate of a second memory cell transistor, a first word line selection transistor capable of supplying a voltage from a voltage supply circuit to the first word line, a second word line selection transistor capable of supplying the voltage from the voltage supply circuit to the second word line, an insulating film provided between the first word line selection transistor and the second word line selection transistor, and a first wiring having at least a part provided on the insulating film and extending in a first direction, in which the voltage supply circuit is capable of supplying a first voltage lower than a ground voltage to the first wiring.
