18437017. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS simplified abstract (SONY GROUP CORPORATION)

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SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

Organization Name

SONY GROUP CORPORATION

Inventor(s)

Masaki Okamoto of Kumamoto (JP)

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18437017 titled 'SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

Simplified Explanation

The abstract describes a method of manufacturing a semiconductor device involving bonding two semiconductor wafers, forming insulating layers, creating connection holes, and forming vias to connect wiring layers.

  • Bonding of two semiconductor wafers with insulating layers
  • Formation of connection holes with different diameters
  • Creation of vias to connect wiring layers

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and memory chips.

Problems Solved

This method solves the problem of efficiently connecting different wiring layers in a semiconductor device while maintaining proper insulation and electrical conductivity.

Benefits

The benefits of this technology include improved performance, increased efficiency in manufacturing processes, and enhanced reliability of semiconductor devices.

Potential Commercial Applications

  • "Semiconductor Device Manufacturing Method for Enhanced Wiring Connections"

Possible Prior Art

There may be prior art related to methods of bonding semiconductor wafers, forming connection holes, and creating vias in semiconductor devices.

Unanswered Questions

How does this method compare to traditional semiconductor manufacturing processes?

This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes.

What are the specific semiconductor devices that can benefit the most from this technology?

The article does not specify the specific semiconductor devices that can benefit the most from this technology.


Original Abstract Submitted

A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.