18436169. NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
Organization Name
Inventor(s)
Sanghee Yoon of Hwaseong-si (KR)
Wooyong Jeon of Anyang-si (KR)
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18436169 titled 'NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
Simplified Explanation
The abstract describes a nonvolatile memory device with a unique structure including multiple layers and structures for improved performance and reliability.
- The device includes a low-resistance conductive layer and a common source line layer for efficient data transfer.
- A stack structure with channel structures and dummy channel structures optimize data storage and retrieval.
- Second bonding pads and interconnect structures enhance connectivity and functionality of the device.
Potential Applications
The technology can be applied in various electronic devices requiring nonvolatile memory storage, such as smartphones, tablets, and laptops.
Problems Solved
This technology addresses the need for nonvolatile memory devices with improved performance, reliability, and efficiency in data storage and retrieval.
Benefits
The device offers faster data access, higher storage capacity, and increased durability compared to traditional nonvolatile memory devices.
Potential Commercial Applications
The technology can be utilized in consumer electronics, automotive systems, industrial equipment, and other devices requiring reliable nonvolatile memory storage.
Possible Prior Art
One possible prior art could be the development of nonvolatile memory devices with multiple layers and structures for enhanced performance and reliability.
What are the specific materials used in the low-resistance conductive layer?
The specific materials used in the low-resistance conductive layer are not mentioned in the abstract. Further details on the composition of this layer would provide a better understanding of the device's performance and characteristics.
How does the dummy channel structure contribute to the overall functionality of the memory device?
The abstract briefly mentions the dummy channel structure passing through a step region of the stack structure. A more in-depth explanation of how this structure enhances the device's performance or reliability would be beneficial for understanding its role in the memory device.
Original Abstract Submitted
A nonvolatile memory device includes a first structure and a second structure bonded to the first structure. The second structure includes a low-resistance conductive layer, a common source line layer on the low-resistance conductive layer, a stack structure above the common source line layer, a plurality of channel structures passing through a cell region of the stack structure and contacting the common source line layer, a dummy channel structure passing through a step region of the stack structure and contacting the common source line layer, a second insulating structure on the stack structure, a plurality of second bonding pads on the second insulating structure, and a second interconnect structure in the second insulating structure.
