18435938. SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Lin Peng of Taoyuan City (TW)
Li-Wei Chu of Hsinchu City (TW)
Ming-Fu Tsai of Hsinchu City (TW)
Jam-Wem Lee of Hsinchu City (TW)
SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435938 titled 'SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS
Simplified Explanation
The abstract describes a semiconductor device with multiple doped regions and wells configured to provide an electrostatic discharge path between an input/output pad and a voltage terminal.
- The semiconductor device includes a first doped region and a second doped region coupled to a first voltage terminal, forming a first diode.
- A first well of the first conductivity type surrounds the first and second doped regions.
- A third doped region serves as a terminal for a second diode, coupled to an input/output pad.
- A second well of the second conductivity type surrounds the third doped region, forming an electrostatic discharge path between the I/O pad and the first voltage terminal.
Potential Applications
The technology described in the patent application could be applied in various electronic devices requiring protection against electrostatic discharge events.
Problems Solved
This technology helps in protecting semiconductor devices from damage caused by electrostatic discharge, ensuring their reliability and longevity.
Benefits
The semiconductor device provides a robust electrostatic discharge protection path, enhancing the overall reliability and performance of electronic systems.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for manufacturing electronic components with improved electrostatic discharge protection.
Possible Prior Art
One possible prior art for this technology could be the use of diodes and wells in semiconductor devices to create electrostatic discharge paths for protection.
Unanswered Questions
How does this technology compare to existing electrostatic discharge protection methods in terms of efficiency and cost-effectiveness?
The article does not provide a direct comparison between this technology and existing methods in terms of efficiency and cost-effectiveness.
What are the specific electronic devices or industries that could benefit the most from this technology?
The article does not specify the specific electronic devices or industries that could benefit the most from this technology.
Original Abstract Submitted
A semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.
