18435872. INTEGRATED CIRCUIT PHOTODETECTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 INTEGRATED CIRCUIT PHOTODETECTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT PHOTODETECTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT PHOTODETECTOR
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ying-Hsun Chen of Hsinchu (TW)
INTEGRATED CIRCUIT PHOTODETECTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435872 titled 'INTEGRATED CIRCUIT PHOTODETECTOR
Simplified Explanation
The abstract describes a patent application for an integrated circuit with a photodetector that includes dielectric structures in a trench in a semiconductor substrate, covered by a photosensitive material and a dielectric layer.
- The photodetector in the integrated circuit includes one or more dielectric structures positioned in a trench in a semiconductor substrate.
- The photosensitive material is positioned in the trench and covers the dielectric structures.
- A dielectric layer covers the photosensitive material.
- The photosensitive material has a higher index of refraction compared to the dielectric structures and the dielectric layer.
Potential Applications
This technology could be used in:
- Optical communication systems
- Image sensors
- Light detection applications
Problems Solved
- Improved light detection efficiency
- Enhanced signal-to-noise ratio
- Miniaturization of photodetectors
Benefits
- Higher sensitivity to light
- Better performance in low-light conditions
- Compact design for integration into various devices
Potential Commercial Applications
- Smartphone cameras
- Medical imaging devices
- Security systems
Possible Prior Art
One possible prior art could be the use of photodetectors with dielectric structures in trench configurations, but with different materials or refractive indices.
Unanswered Questions
How does this technology compare to traditional photodetectors in terms of performance and cost?
This article does not provide a direct comparison between this technology and traditional photodetectors.
Are there any limitations to the size or scale at which this technology can be implemented?
The article does not address any potential limitations regarding the size or scale of implementation for this technology.
Original Abstract Submitted
An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
