18435283. Semiconductor Device And Method For Manufacturing The Same simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
Semiconductor Device And Method For Manufacturing The Same
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Semiconductor Device And Method For Manufacturing The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435283 titled 'Semiconductor Device And Method For Manufacturing The Same
Simplified Explanation: The semiconductor device described in the patent application includes a pixel electrode and a transistor with specific layers and electrodes.
Key Features and Innovation:
- Pixel electrode and transistor with distinct layers and electrodes.
- First gate electrode, first insulating layer, semiconductor layer, second insulating layer, and second gate electrode.
- Overlapping regions between the gate electrodes and the semiconductor layer with insulating layers in between.
- Thinner second insulating layer in the region where the second gate electrode overlaps with the semiconductor layer.
Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications, including displays, sensors, and integrated circuits.
Problems Solved: The technology addresses the need for precise control and efficient operation of transistors in semiconductor devices, improving overall performance and reliability.
Benefits:
- Enhanced functionality and performance of semiconductor devices.
- Improved control and efficiency of transistors.
- Potential for miniaturization and increased integration in electronic systems.
Commercial Applications: The technology can be utilized in the production of high-resolution displays, sensitive sensors for various industries, and compact integrated circuits for consumer electronics.
Prior Art: Readers can explore prior patents related to semiconductor device structures, transistor configurations, and pixel electrode designs to understand the evolution of this technology.
Frequently Updated Research: Stay informed about the latest advancements in semiconductor device technology, transistor optimization, and electrode materials to enhance the performance of electronic devices.
Questions about Semiconductor Devices: 1. What are the key components of a semiconductor device? 2. How does the thickness of insulating layers impact the performance of transistors in semiconductor devices?
Original Abstract Submitted
A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first gate electrode has a region overlapping with the semiconductor layer with the first insulating layer provided therebetween. The second gate electrode has a region overlapping with the semiconductor layer with the second insulating layer provided therebetween. A first region is at least part of a region where the second gate electrode overlaps with the semiconductor layer. A second region is at least part of a region where the pixel electrode is provided. The second insulating layer is thinner in the first region than in the second region.
