18434982. CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS simplified abstract (ASM IP Holding B.V.)
Contents
- 1 CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS
Organization Name
Inventor(s)
Trigagema Gama of Hwaseong-si (KR)
Ryu Nakano of Sagamihara-shi Kanagawa (JP)
CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434982 titled 'CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS
Simplified Explanation
Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.
- Silicon oxide layer deposition methods
- Cyclical deposition process
- Use of first and second silicon precursors
- Utilization of reactant or non-reactant gas
- Treatment step included
Potential Applications
The technology can be applied in the semiconductor industry for the fabrication of electronic devices. It can also be used in the production of solar cells and optical coatings.
Problems Solved
Provides a method for depositing silicon oxide layers with precision and control. Offers a cyclical deposition process for improved efficiency and uniformity in layer formation.
Benefits
Enhanced performance of electronic devices with precise silicon oxide layers. Increased efficiency in the production of solar cells and optical coatings.
Potential Commercial Applications
"Silicon Oxide Layer Deposition Technology for Semiconductor Industry"
Possible Prior Art
There may be existing methods for depositing silicon oxide layers, but the specific cyclical deposition process with first and second silicon precursors may be a novel approach.
Unanswered Questions
How does this technology compare to traditional silicon oxide deposition methods?
This article does not provide a direct comparison between the new cyclical deposition process and traditional methods. It would be beneficial to understand the advantages and disadvantages of each approach in terms of efficiency, cost, and quality of the silicon oxide layer.
What are the environmental implications of using this technology in mass production?
The environmental impact of the cyclical deposition process and the materials involved is not discussed in this article. Understanding the potential environmental benefits or drawbacks of implementing this technology on a larger scale would be valuable for assessing its overall sustainability.
Original Abstract Submitted
Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.
