18434940. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hirotaka Otake of Kyoto-shi (JP)
NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434940 titled 'NITRIDE SEMICONDUCTOR DEVICE
The present disclosure describes a nitride semiconductor device with various layers and electrodes, including a passivation layer and a source insulator film.
- The device includes an electron travelling layer, an electron supply layer, a gate layer, a gate electrode, a source electrode, a drain electrode, and a passivation layer.
- The gate layer has a side surface at the end of the source electrode, and the passivation layer has a side surface facing the source electrode.
- A source insulator film covers the gate layer side surface and the passivation first side surface, insulating the gate layer from the source electrode.
Potential Applications: - This technology can be used in high-frequency and high-power electronic devices. - It can also be applied in wireless communication systems and radar systems.
Problems Solved: - Provides insulation between the gate layer and the source electrode, preventing electrical interference. - Enhances the performance and reliability of nitride semiconductor devices.
Benefits: - Improved efficiency and stability in electronic devices. - Reduction of signal loss and interference.
Commercial Applications: - This technology can be utilized in the telecommunications industry for the development of advanced electronic devices. - It can also find applications in military and aerospace sectors for radar and communication systems.
Questions about Nitride Semiconductor Device: 1. How does the source insulator film contribute to the overall performance of the device? The source insulator film insulates the gate layer from the source electrode, preventing electrical interference and enhancing device reliability.
2. What are the potential market implications of implementing this nitride semiconductor device in commercial electronic products? The market implications include improved efficiency and stability in electronic devices, leading to enhanced performance and reliability in various applications.
Original Abstract Submitted
The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes an electron travelling layer, an electron supply layer, a gate layer, a gate electrode, a source electrode, a drain electrode and a passivation layer. The gate layer includes a gate layer side surface located at an end portion of a side of the source electrode along a first direction, which is a direction in which the gate layer, the source electrode and the drain electrode are arranged. The passivation layer includes a passivation first side surface facing the source electrode along the first direction. The nitride semiconductor device further includes a source insulator film that covers the gate layer side surface and the passivation first side surface. The source insulator film insulates the gate layer from the source electrode.
