18434356. THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
THREE-DIMENSIONAL MEMORY DEVICE
Organization Name
Inventor(s)
THREE-DIMENSIONAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434356 titled 'THREE-DIMENSIONAL MEMORY DEVICE
The memory device described in the patent application includes a stack structure with a common source line and a peripheral circuit structure that overlaps the stack structure. The peripheral circuit structure contains a common source line driver responsible for discharging the common source line. This driver consists of two units, each connected to the common source line through different networks, allowing them to discharge the line independently.
- The memory device features a unique common source line driver with two driving units operating independently.
- The first and second common source line driving units are connected to the common source line through separate networks.
- The design allows for more efficient control and discharge of the common source line in the memory device.
- The innovation aims to enhance the performance and reliability of memory devices by optimizing the management of the common source line.
- This technology could potentially lead to advancements in memory storage systems and semiconductor devices.
Potential Applications: - Memory devices - Semiconductor devices - Integrated circuits
Problems Solved: - Efficient control and discharge of common source lines in memory devices - Optimization of memory device performance and reliability
Benefits: - Improved management of common source lines - Enhanced performance and reliability of memory devices - Potential advancements in memory storage systems and semiconductor devices
Commercial Applications: Memory device manufacturers could integrate this technology into their products to enhance performance and reliability, potentially gaining a competitive edge in the market.
Questions about the technology: 1. How does the independent control of the common source line driving units improve memory device performance? 2. What specific advantages does the unique common source line driver offer compared to traditional designs?
Original Abstract Submitted
A memory device includes a stack structure, in which a common source line is formed, and a peripheral circuit structure overlapping the stack structure when viewed in plan view and comprising a common source line driver configured to discharge the common source line. The common source line driver includes a first common source line driving unit, electrically connected to the common source line through a first network and configured to discharge the common source line, and a second common source line driving unit electrically connected to the common source line through a second network, different from the first network, and configured to discharge the common source line. The first common source line driving unit and the second common source line driving unit are controlled independently of each other.
