18434121. Semiconductor Patterning and Resulting Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Semiconductor Patterning and Resulting Structures
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Patterning and Resulting Structures - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing lithography techniques in terms of resolution and efficiency?
- 1.11 What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
- 1.12 Original Abstract Submitted
Semiconductor Patterning and Resulting Structures
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Ming Lung of Hsinchu (TW)
Semiconductor Patterning and Resulting Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434121 titled 'Semiconductor Patterning and Resulting Structures
Simplified Explanation
The method described in the abstract involves depositing a hard mask over a target layer, forming mandrels, depositing a spacer layer, patterning the spacer layer to create spacers, transferring the pattern to the hard mask, and patterning the target layer using the hard mask as a mask.
- Depositing a hard mask over a target layer
- Depositing a first hard mask layer with a first density
- Depositing a second hard mask layer with a second density greater than the first density
- Forming a plurality of mandrels over the hard mask
- Depositing a spacer layer over and along the sidewalls of the mandrels
- Patterning the spacer layer to provide spacers on the sidewalls of the mandrels
- Removing the mandrels after patterning the spacer layer
- Transferring and patterning the spacers to the hard mask
- Patterning the target layer using the hard mask as a mask
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for advanced lithography processes.
Problems Solved
This technology solves the problem of achieving high-resolution patterning on target layers in semiconductor manufacturing.
Benefits
The benefits of this technology include improved precision and control in patterning processes, leading to enhanced performance and efficiency in semiconductor device manufacturing.
Potential Commercial Applications
One potential commercial application of this technology is in the production of high-density memory devices for various electronic devices.
Possible Prior Art
Prior art in this field may include similar methods for patterning target layers in semiconductor manufacturing, but the specific combination of steps outlined in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing lithography techniques in terms of resolution and efficiency?
This article does not provide a direct comparison between this technology and existing lithography techniques. Further research or testing may be needed to determine the specific advantages and limitations of this method compared to others.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address potential challenges or limitations that may arise when implementing this technology on an industrial scale. Additional studies or pilot projects may be necessary to assess the scalability and practicality of this method in real-world manufacturing environments.
Original Abstract Submitted
A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.
