18434077. VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Li-Zhen Yu of New Taipei City (TW)

Lin-Yu Huang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Baoshan Township (TW)

VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18434077 titled 'VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE

Simplified Explanation

The semiconductor device structure described in the abstract includes a first insulating layer, a second insulating layer, and a conductive structure with a metal line and metal features formed within the layers.

• The semiconductor device structure includes a first insulating layer.
• A second insulating layer is formed over the first insulating layer.
• A conductive structure is formed within the second insulating layer.
• The conductive structure includes a metal line with specific top and bottom surfaces.
• A first metal feature is formed within a concave recess of the metal line.
• A second metal feature is formed below the first insulating layer and connected to the first metal feature.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, integrated circuits, and electronic components.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing a more reliable and compact conductive structure.

Benefits

The benefits of this technology include enhanced electrical connectivity, reduced signal interference, and increased overall device reliability.

Potential Commercial Applications

The potential commercial applications of this technology could be in the fields of telecommunications, consumer electronics, automotive electronics, and industrial automation.

Possible Prior Art

One possible prior art could be the use of similar metal line structures in semiconductor devices for improved electrical conductivity and signal transmission.

Unanswered Questions

How does this technology compare to existing semiconductor device structures in terms of performance and reliability?

The article does not provide a direct comparison with existing semiconductor device structures to evaluate performance and reliability.

What are the specific manufacturing processes involved in creating the conductive structure described in the patent application?

The article does not detail the specific manufacturing processes involved in creating the conductive structure within the semiconductor device.

Original Abstract Submitted

A semiconductor device structure is provided. The semiconductor device structure includes a first insulating layer, a second insulating layer formed over the first insulating layer, and a conductive structure formed within the second insulating layer. The conductive structure includes a metal line having a plane top surface, a bottom surface having a first concave recess portion and a plane portion, and a sidewall adjoining the plane top surface and the plane portion of the bottom surface. The conductive structure also includes a first metal feature formed within the first concave recess. The semiconductor device structure further includes a second metal feature formed below the first insulating layer and electrically connected to the first metal feature.