18433864. INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Kenichi Okazaki of Tochigi (JP)

Toshinari Sasaki of Shinagawa (JP)

Shuhei Yokoyama of Tochigi (JP)

Takashi Hamochi of Shimotsuga (JP)

INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18433864 titled 'INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for forming an oxide insulating film with excess oxygen as a protective film in a semiconductor device.

• Conditions for forming the oxide insulating film:

   * Substrate temperature: 180°C to 260°C
   * Pressure in treatment chamber: 100 Pa to 250 Pa
   * High-frequency power supply: 0.17 W/cm to 0.5 W/cm

Potential Applications

The technology can be applied in the manufacturing of semiconductor devices, particularly in enhancing the protective film over transistors.

Problems Solved

1. Improved protection: The oxide insulating film with excess oxygen provides better protection for the transistor. 2. Enhanced performance: The method ensures the protective film is formed under specific conditions, optimizing the performance of the semiconductor device.

Benefits

1. Increased durability: The protective film with excess oxygen improves the durability of the semiconductor device. 2. Better reliability: The method results in a more reliable protective film, reducing the risk of damage to the transistor.

Potential Commercial Applications

Optimizing the protective film in semiconductor devices can benefit various industries such as electronics, telecommunications, and computing.

Possible Prior Art

There may be prior art related to methods for forming protective films in semiconductor devices, but specific information is not provided in the patent application.

How does this technology compare to existing methods for forming protective films in semiconductor devices?

The article does not provide a direct comparison with existing methods for forming protective films in semiconductor devices. It would be interesting to know the advantages and disadvantages of this new method compared to traditional techniques.

What are the long-term effects of using an oxide insulating film with excess oxygen in semiconductor devices?

The potential long-term effects of using this specific type of protective film on the overall performance and lifespan of semiconductor devices are not discussed in the article. Understanding the longevity and stability of the protective film could be crucial for assessing the technology's practicality in the long run.

Original Abstract Submitted

In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cmand lower than or equal to 0.5 W/cmis supplied to an electrode provided in the treatment chamber.