18433863. Memory Array and Methods Used in Forming a Memory Array simplified abstract (Micron Technology, Inc.)
Contents
- 1 Memory Array and Methods Used in Forming a Memory Array
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Memory Array and Methods Used in Forming a Memory Array - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Memory Array Formation
- 1.11 Original Abstract Submitted
Memory Array and Methods Used in Forming a Memory Array
Organization Name
Inventor(s)
Luan C. Tran of Meridian ID (US)
Guangyu Huang of Boise ID (US)
Memory Array and Methods Used in Forming a Memory Array - A simplified explanation of the abstract
This abstract first appeared for US patent application 18433863 titled 'Memory Array and Methods Used in Forming a Memory Array
Simplified Explanation
The patent application describes a method for forming a memory array by etching through various tiers to create channel openings that are then filled with channel material, allowing for direct electrical coupling with a conductive tier.
- The method involves forming a substrate with multiple tiers including conductive, insulator etch-stop, select gate, insulative, and wordline tiers.
- Etching is conducted through the layers to create channel openings with individual bottoms made of the insulator etch-stop tier.
- The insulator etch-stop tier is penetrated to extend the channel openings to the conductive tier.
- Channel material is then formed in the openings and electrically coupled with the conductive material.
- The structure of the memory array is disclosed as being independent of the method used.
Key Features and Innovation
- Formation of a memory array with a unique tier structure.
- Direct electrical coupling between channel material and conductive tier.
- Efficient etching process to create channel openings.
Potential Applications
The technology can be applied in the manufacturing of memory arrays for various electronic devices such as computers, smartphones, and tablets.
Problems Solved
- Efficient formation of memory arrays.
- Direct electrical coupling for improved performance.
- Precise etching process for channel openings.
Benefits
- Enhanced memory array performance.
- Improved efficiency in memory array manufacturing.
- Increased reliability of electronic devices.
Commercial Applications
Memory array manufacturers can utilize this technology to produce high-performance memory arrays for consumer electronics, leading to improved device functionality and reliability.
Questions about Memory Array Formation
How does the etching process work in forming the memory array?
The etching process involves penetrating through multiple tiers to create channel openings for the channel material.
What are the benefits of direct electrical coupling in memory arrays?
Direct electrical coupling allows for improved performance and efficiency in memory arrays, enhancing overall device functionality.
Original Abstract Submitted
A method used in forming a memory array, comprises forming a substrate comprising a conductive tier, an insulator etch-stop tier above the conductive tier, a select gate tier above the insulator etch-stop tier, and a stack comprising vertically-alternating insulative tiers and wordline tiers above the select gate tier. Etching is conducted through the insulative tiers, the wordline tiers, and the select gate tier to and stopping on the insulator etch-stop tier to form channel openings that have individual bottoms comprising the insulator etch-stop tier. The insulator etch-stop tier is penetrated through to extend individual of the channel openings there-through to the conductive tier. Channel material is formed in the individual channel openings elevationally along the insulative tiers, the wordline tiers, and the select gate tier and is directly electrically coupled with the conductive material in the conductive tier. Structure independent of method is disclosed.
