18433753. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungjin Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18433753 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes gate structures, source/drain patterns, isolation patterns, and a substrate. Here are some key points to explain the patent/innovation:
- The semiconductor device consists of gate structures with gate electrodes and gate capping patterns.
- Source/drain patterns are located on opposite sides of the gate structures.
- First isolation patterns penetrate adjacent gate structures to separate them from each other.
- A second isolation pattern extends between adjacent source/drain patterns, penetrating at least one gate structure.
- The top surfaces of the isolation patterns are at the same level as or higher than the top surface of the gate capping pattern.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing effective isolation between components and reducing interference.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and improved overall functionality of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of faster and more reliable electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar isolation patterns in semiconductor devices to improve device performance and reliability.
Unanswered Questions
How does this technology compare to existing isolation techniques in semiconductor devices?
This article does not provide a direct comparison to existing isolation techniques in semiconductor devices. It would be beneficial to understand the specific advantages and disadvantages of this technology compared to traditional methods.
What are the specific manufacturing processes involved in implementing this technology in semiconductor devices?
The article does not delve into the detailed manufacturing processes required to implement this technology. Understanding the specific steps involved in the fabrication of these devices could provide valuable insights into the feasibility and scalability of this innovation.
Original Abstract Submitted
A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.
