18433251. METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yung-Sung Yen of New Taipei City (TW)

Chung-Ju Lee of Hsinchu City (TW)

Chun-Kuang Chen of Hsinchu County (TW)

Chia-Tien Wu of Taichung City (TW)

Ta-Ching Yu of Hsinchu County (TW)

Kuei-Shun Chen of Hsinchu City (TW)

Ru-Gun Liu of Hsinchu County (TW)

Shau-Lin Shue of Hsinchu (TW)

Tsai-Sheng Gau of HsinChu City (TW)

Yung-Hsu Wu of Taipei City (TW)

METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18433251 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS

Simplified Explanation

The method described in the abstract involves a process of forming trenches in a material layer using hard masks and spacers to guide the etching process. This allows for precise patterning and etching of the material layer to create desired structures.

• Formation of material layer over a substrate
• Creation of first hard mask (HM) layer over the material layer
• Formation of first trench in the first HM layer along a specific direction
• Formation of first spacers along the sidewalls of the first trench
• Creation of a second trench in the first HM layer parallel to the first trench using the first spacers
• Etching of the material layer through the first and second trenches
• Removal of the first HM layer and spacers
• Formation of a second HM layer over the material layer
• Formation of a third trench in the second HM layer perpendicular to the first direction and overlapping with the first trench
• Etching of the material layer through the third trench

Potential Applications

This method can be applied in semiconductor manufacturing processes for creating intricate patterns and structures on substrates.

Problems Solved

This method helps in achieving high precision and control in etching processes, allowing for the creation of complex structures with minimal defects.

Benefits

- Improved accuracy in patterning - Enhanced control over etching processes - Enables the creation of advanced semiconductor devices

Potential Commercial Applications

The technology can be utilized in the production of microchips, sensors, and other semiconductor devices.

Possible Prior Art

Prior art may include similar methods of using hard masks and spacers for etching processes in semiconductor manufacturing.

How does this method compare to traditional etching techniques in terms of efficiency and precision?

This article does not provide a direct comparison between this method and traditional etching techniques. Further research or experimentation may be needed to determine the advantages and limitations of this approach.

What are the potential challenges or limitations of scaling up this method for mass production?

The article does not address the scalability of this method for large-scale manufacturing. Factors such as production time, cost, and equipment requirements could pose challenges that need to be explored further.

Original Abstract Submitted

A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.