18433162. METHOD AND STRUCTURE FOR FINFET DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 METHOD AND STRUCTURE FOR FINFET DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE FOR FINFET DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to existing techniques for forming fin structures in semiconductor devices?
- 1.11 What specific types of semiconductor devices could benefit most from this technology?
- 1.12 Original Abstract Submitted
METHOD AND STRUCTURE FOR FINFET DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County (TW)
Ying-Keung Leung of Hsin-Chu (TW)
METHOD AND STRUCTURE FOR FINFET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18433162 titled 'METHOD AND STRUCTURE FOR FINFET DEVICE
Simplified Explanation
The present disclosure describes a method for forming fin structures over a substrate with trenches in between, involving dielectric layers and capping layers.
- Forming first and second fin structures over a substrate
- Creating a first trench between the fin structures
- Depositing a first dielectric layer in the first trench
- Recessing the first dielectric layer to expose part of the first fin structure
- Applying a first capping layer over the exposed portion of the first fin structure and the recessed dielectric layer
- Adding a second dielectric layer over the first capping layer in the first trench
- Removing the first capping layer from the first fin structure
Potential Applications
This technology could be applied in the semiconductor industry for the fabrication of advanced integrated circuits.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enhancing the structure and insulation of fin features.
Benefits
- Enhanced device performance - Improved insulation between fin structures - Increased efficiency in semiconductor manufacturing processes
Potential Commercial Applications
"Advanced Semiconductor Fabrication Method for Improved Device Performance"
Possible Prior Art
There may be prior art related to methods for forming fin structures and dielectric layers in semiconductor devices, but specific examples are not provided in this disclosure.
Unanswered Questions
How does this method compare to existing techniques for forming fin structures in semiconductor devices?
This article does not provide a direct comparison with existing techniques, so it is unclear how this method differs or improves upon current practices.
What specific types of semiconductor devices could benefit most from this technology?
The disclosure does not specify which types of semiconductor devices would see the most significant improvements from this method, leaving room for further exploration and research in this area.
Original Abstract Submitted
The present disclosure provides a method, which includes forming a first fin structure and a second fin structure over a substrate, which has a first trench positioned between the first and second fin structures. The method also includes forming a first dielectric layer within the first trench, recessing the first dielectric layer to expose a portion of the first fin structure, forming a first capping layer over the exposed portion of the first fin structure and the recessed first dielectric layer in the first trench, forming a second dielectric layer over the first capping layer in the first trench while the first capping layer covers the exposed portion of the first fin feature and removing the first capping layer from the first fin structure.
