18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Harry-Hak-Lay Chuang of Singapore (SG)
Yi-Ren Chen of Taoyuan County (TW)
Chao-Hsiung Wang of Hsin-Chu City (TW)
STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432985 titled 'STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN
Simplified Explanation
The present disclosure describes a semiconductor structure with a field effect transistor (FET) formed on a semiconductor substrate, including two semiconductor mesas and doped features of different conductivity types.
- Semiconductor structure with FET:
* Includes a semiconductor substrate with two regions * First semiconductor mesa in the first region * Second semiconductor mesa in the second region * FET with doped features in the first semiconductor mesa * Channel in the first semiconductor mesa * Gate on the sidewall of the first semiconductor mesa
Potential Applications
The semiconductor structure with the FET can be used in:
- Integrated circuits
- Power electronics
- Communication devices
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing semiconductor device efficiency
- Reducing power consumption
Benefits
The semiconductor structure offers:
- Higher speed operation
- Increased device reliability
- Better control over electronic signals
Potential Commercial Applications
The semiconductor structure can be applied in:
- Smartphones and tablets
- Computers and laptops
- Automotive electronics
Possible Prior Art
One possible prior art could be the use of similar FET structures in semiconductor devices for improved performance.
Unanswered Questions
How does the size of the semiconductor mesas affect the overall performance of the FET?
The abstract does not provide information on how the dimensions of the semiconductor mesas impact the functionality of the FET.
What materials are used for the gate formation on the sidewall of the semiconductor mesa?
The abstract does not mention the specific materials utilized for creating the gate on the sidewall of the semiconductor mesa.
Original Abstract Submitted
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.
