18432812. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Aryan Afzalian of Chastre (BE)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432812 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves etching a substrate to form a core structure, creating shallow trench isolation features, doping the substrate and core structure to form source/drain regions, growing a barrier layer, and forming spacers and a shell with different doping conductivity types.
- Etch substrate to form core structure
- Create shallow trench isolation features
- Dope substrate and core structure to form source/drain regions with different concentrations
- Grow barrier layer on upper portion of core structure
- Form spacers covering STI features and lower portion of core structure
- Create shell wrapping upper portion of core structure and barrier layer
- Form second source/drain region with different doping concentration over shell
Potential Applications
This technology could be applied in the semiconductor industry for manufacturing advanced transistors with improved performance and efficiency.
Problems Solved
This innovation helps in enhancing the functionality and reliability of semiconductor devices by optimizing the doping concentrations and structure of source/drain regions.
Benefits
The benefits of this technology include increased transistor performance, reduced power consumption, and improved overall device reliability.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of high-performance integrated circuits for various electronic devices.
Possible Prior Art
One possible prior art could be the use of similar techniques in the fabrication of semiconductor devices, but with variations in the specific process steps and structures.
Unanswered Questions
How does this technology compare to existing methods in terms of transistor performance and power efficiency?
This article does not provide a direct comparison with existing methods in the semiconductor industry.
What are the specific doping concentrations used in the first and second source/drain regions?
The exact doping concentrations for the first and second source/drain regions are not specified in the abstract.
Original Abstract Submitted
A method includes the following steps. A substrate is etched, forming a core structure protruding out of a plane of the substrate. Shallow trench isolation (STI) features are formed on opposite sides of the core structure. The substrate and a lower portion of the core structure are doped to form a first source/drain region with a first doping concentration. A barrier layer is grown on an upper portion of the core structure. A first spacer is formed covering the STI features and covering the lower portion of core structure. A shell is formed wrapping the upper portion of the core structure and the barrier layer. The shell and the upper portion of the core structure have different doping conductivity types. A second source/drain region is formed with a second doping concentration over the shell. The first doping concentration and the second doping concentration are different from each other.
