18432699. MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
- 1 MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Hiroshi Shiraki of Nagaokakyo-shi (JP)
Yuichi Shimakawa of Uji-shi (JP)
MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432699 titled 'MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD
Simplified Explanation
The patent application describes a mist chemical vapor deposition (CVD) film formation device that includes a film forming chamber with a mist inflow port, a stage for supporting a film forming target, and a mist outflow port. The device also includes a heater to heat the stage.
- Mist CVD film formation device
- Film forming chamber with mist inflow and outflow ports
- Stage for supporting film forming target
- Heater to heat the stage
Potential Applications
The technology could be used in the semiconductor industry for thin film deposition processes, such as in the production of integrated circuits.
Problems Solved
The device provides a controlled environment for film formation, ensuring uniform deposition of materials on the target surface.
Benefits
- Precise control over film formation process - Uniform deposition of materials - Increased efficiency in thin film deposition processes
Potential Commercial Applications
"Semiconductor Industry: Improving Thin Film Deposition Processes with Mist CVD Film Formation Device"
Possible Prior Art
There are existing mist CVD systems used in various industries for thin film deposition processes. However, the specific design and features of this device may be novel.
Unanswered Questions
1. What is the energy consumption of the device compared to traditional CVD systems? 2. Are there any limitations on the types of materials that can be deposited using this device?
Original Abstract Submitted
A mist CVD film formation device that includes: a film forming chamber including: a mist inflow port through which a film forming mist containing a mist of a film forming raw material and a carrier gas flows into the film forming chamber, a stage that supports a film forming target, and a mist outflow port through which the film forming mist flows out of the film forming chamber, wherein an outflow port sectional area is smaller than a film forming chamber interior sectional area; and a heater that heats the stage.
