18432694. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chang-Yin Chen of Taipei City (TW)
Che-Cheng Chang of New Taipei City (TW)
Chih-Han Lin of Hsinchu City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432694 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a device with a multilayer gate spacer structure for a semiconductor fin.
- The device includes a semiconductor fin extending from a substrate.
- A gate structure extends across the semiconductor fin.
- A multilayer gate spacer is on a sidewall of the gate structure.
- The multilayer gate spacer consists of an inner spacer layer, an outer spacer layer, and a dielectric structure.
- The inner spacer layer has a vertical portion along the sidewall of the gate structure and a lateral portion extending away from the gate structure.
- The outer spacer layer is separated from the inner spacer layer by an air gap.
- The dielectric structure separates the bottom end of the outer spacer layer from the lateral portion of the inner spacer layer.
Potential Applications
The technology can be applied in the semiconductor industry for advanced transistor manufacturing processes.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by enhancing gate control.
Benefits
The device offers better gate control, leading to improved overall performance and power efficiency in semiconductor devices.
Potential Commercial Applications
- "Enhancing Gate Control in Semiconductor Devices for Improved Performance and Efficiency"
Possible Prior Art
There may be prior art related to gate spacer structures in semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology impact the overall cost of semiconductor device manufacturing?
The abstract does not mention any details about the cost implications of implementing this technology in semiconductor manufacturing processes.
Are there any limitations or drawbacks associated with the multilayer gate spacer structure described in the patent application?
The abstract does not address any potential limitations or drawbacks of the multilayer gate spacer structure, leaving room for further exploration and analysis in this area.
Original Abstract Submitted
A device includes a semiconductor fin semiconductor fin extending from a substrate, a gate structure extending across the semiconductor fin, and a multilayer gate spacer on a sidewall of the gate structure. The multilayer gate spacer includes an inner spacer layer, an outer spacer layer, and a dielectric structure. The inner spacer layer has a vertical portion extending along the sidewall of the gate structure, and a lateral portion laterally extending from the vertical portion in a direction away from the gate structure. The outer spacer layer is spaced apart from the vertical portion of the inner spacer layer by an air gap. The dielectric structure spaces apart a bottom end of the outer spacer layer from the lateral portion of the inner spacer layer.
