18432543. INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing power distribution methods in integrated circuits?
- 1.11 What impact could this technology have on the overall cost of manufacturing electronic devices?
- 1.12 Original Abstract Submitted
INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Xin-Yong Wang of Shanghai City (CN)
Li-Chun Tien of Tainan City (TW)
Chih-Liang Chen of Hsinchu City (TW)
INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432543 titled 'INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The integrated circuit described in the abstract includes two transistors, each with an active region and a gate structure, as well as power lines connected to the source regions of the active regions. The first transistor is above the second transistor, and the first power line is above the first transistor, while the second power line is below the second transistor.
- The integrated circuit includes a first transistor with a first active region and a first gate structure.
- The second transistor is located below the first transistor and has a second active region and a second gate structure.
- A first power line is electrically connected to the source region of the first active region.
- A second power line is electrically connected to the source region of the second active region.
Potential Applications
This technology could be used in various electronic devices such as smartphones, tablets, and computers to improve performance and efficiency.
Problems Solved
This technology helps in enhancing the functionality and reliability of integrated circuits by providing efficient power distribution and connectivity.
Benefits
The integrated circuit design described in the patent application offers improved power management, reduced signal interference, and overall enhanced performance.
Potential Commercial Applications
"Enhancing Power Distribution in Integrated Circuits for Improved Performance"
Possible Prior Art
There may be prior art related to power distribution and transistor design in integrated circuits, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing power distribution methods in integrated circuits?
This article does not provide a direct comparison to existing power distribution methods in integrated circuits, leaving the reader to wonder about the specific advantages of this new design.
What impact could this technology have on the overall cost of manufacturing electronic devices?
The article does not address the potential cost implications of implementing this technology, leaving the reader to speculate on the economic feasibility of widespread adoption.
Original Abstract Submitted
An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.
