18432385. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Minwoong Seo of Hwaseong-si (KR)
Myunglae Chu of Hwaseong-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432385 titled 'IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor with a pixel array where each pixel includes a photodiode, a floating diffusion node, capacitors, and sampling transistors for charge storage and sampling.
- Photodiode: Captures light and generates photocharge.
- Floating diffusion node: Integrates the photocharge.
- First capacitor: Stores charge corresponding to the voltage of the floating diffusion node after reset.
- First sampling transistor: Samples charge to the first capacitor.
- Second capacitor: Stores charge corresponding to the integrated photocharge voltage.
- Second sampling transistor: Samples charge to the second capacitor.
Potential Applications
This technology can be used in digital cameras, smartphones, surveillance systems, and medical imaging devices.
Problems Solved
This technology improves image sensor performance by enhancing charge storage and sampling capabilities, leading to better image quality and sensitivity.
Benefits
The benefits of this technology include higher image resolution, improved low-light performance, reduced noise, and enhanced overall image quality.
Potential Commercial Applications
The potential commercial applications of this technology include consumer electronics, security systems, medical imaging equipment, and industrial cameras.
Possible Prior Art
One possible prior art for this technology could be the use of similar pixel structures in previous image sensor designs, but with variations in the specific configuration of components.
What is the manufacturing cost of implementing this technology in mass production?
The manufacturing cost of implementing this technology in mass production would depend on factors such as the complexity of the sensor design, the materials used, and the production volume. Companies would need to conduct cost-benefit analyses to determine the feasibility of mass-producing image sensors with this technology.
How does this technology compare to existing image sensor technologies in terms of power consumption?
This technology may offer improvements in power consumption compared to existing image sensor technologies by optimizing charge storage and sampling processes, potentially leading to more efficient use of power resources in capturing and processing images. However, specific power consumption comparisons would require detailed testing and analysis.
Original Abstract Submitted
An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.
