18432377. REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wang-Chun Huang of Hsinchu (TW)

Yu-Xuan Huang of Hsinchu (TW)

Hou-Yu Chen of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18432377 titled 'REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE

Simplified Explanation

The semiconductor structure described in the abstract includes a substrate, first and second gate structures, and an isolation feature between the gate structures. The top surface of the isolation feature is above the topmost surface of the first gate structure.

  • Substrate, first gate structure, second gate structure, and isolation feature are key components of the semiconductor structure.
  • The isolation feature extends through the substrate and separates the first and second gate structures.
  • The top surface of the isolation feature is positioned higher than the topmost surface of the first gate structure.

Potential Applications

The semiconductor structure with improved isolation features can be used in:

  • High-performance integrated circuits
  • Advanced electronic devices requiring precise control of electrical signals

Problems Solved

This technology addresses the following issues:

  • Minimizing interference between different components on the semiconductor structure
  • Enhancing the overall performance and reliability of electronic devices

Benefits

The benefits of this technology include:

  • Improved efficiency and functionality of semiconductor devices
  • Enhanced signal processing capabilities
  • Increased durability and longevity of electronic components

Potential Commercial Applications

The semiconductor structure can be applied in various commercial sectors, such as:

  • Consumer electronics
  • Telecommunications industry
  • Automotive technology

Possible Prior Art

Prior art related to semiconductor structures with isolation features may include:

  • Existing patents on gate structures and isolation techniques in semiconductor devices
  • Research papers discussing the impact of isolation features on device performance

Unanswered Questions

How does the positioning of the isolation feature impact the overall performance of the semiconductor structure?

The abstract mentions that the top surface of the isolation feature is above the topmost surface of the first gate structure, but it does not elaborate on the specific effects of this positioning.

What are the specific materials used in the construction of the isolation feature and how do they contribute to the functionality of the semiconductor structure?

The abstract does not provide details on the materials used for the isolation feature or their role in enhancing the performance of the semiconductor structure.


Original Abstract Submitted

A semiconductor structure includes a substrate, a first gate structure and a second gate structure disposed over the substrate, and an isolation feature extending through the substrate and disposed between the first gate structure and the second gate structure. A top surface of the isolation feature is above a topmost surface of the first gate structure.