18432351. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Dongkyu Lee of Suwon-si (KR)

Sungil Park of Suwon-si (KR)

Jaehyun Park of Suwon-si (KR)

Jinwook Yang of Suwon-si (KR)

Jinchan Yun of Suwon-si (KR)

Cheoljin Yun of Suwon-si (KR)

Daewon Ha of Suwon-si (KR)

Kyuman Hwang of Suwon-si (KR)

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18432351 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

Simplified Explanation: The patent application describes an integrated circuit semiconductor device with vertically stacked gate-all-around transistors to reduce unit area and simplify metal wiring layer connections.

• Two gate-all-around transistors or multi-bridge channel field effect transistors can be vertically stacked.
• The stacked transistors may be separated by an isolation insulating layer.
• The transistors can be positioned on opposite sides of the isolation insulating layer in an opposite manner.
• Metal wiring layers may be connected to the transistors at their far ends, away from the isolation insulating layer.
• The innovation aims to reduce unit area and facilitate the manufacture of metal wiring layers connected to the transistors.

Potential Applications: This technology can be applied in the manufacturing of integrated circuit semiconductor devices for various electronic devices such as smartphones, tablets, computers, and other consumer electronics.

Problems Solved: 1. Reduction of unit area in integrated circuit semiconductor devices. 2. Simplification of metal wiring layer connections to transistors. 3. Facilitation of manufacturing processes for semiconductor devices.

Benefits: 1. Increased efficiency in semiconductor device manufacturing. 2. Enhanced performance of electronic devices. 3. Cost-effective production of integrated circuits.

Commercial Applications: The technology can be utilized in the production of advanced electronic devices, leading to improved performance, reduced size, and increased cost-effectiveness in the semiconductor industry.

Questions about Integrated Circuit Semiconductor Devices with Three-Dimensional Transistors: 1. How does the vertical stacking of transistors contribute to reducing unit area in semiconductor devices? 2. What are the advantages of connecting metal wiring layers to the transistors at their far ends?

Frequently Updated Research: Researchers are continually exploring new methods to enhance the efficiency and performance of integrated circuit semiconductor devices through innovative transistor designs and manufacturing processes. Stay updated on the latest advancements in semiconductor technology to leverage the benefits of cutting-edge innovations.

Original Abstract Submitted

An integrated circuit semiconductor device with three dimensional transistors includes two gate-all-around transistors or multi-bridge channel field effect transistors may be vertically stacked to reduce unit area. The two stacked transistors may be separated by an isolation insulating layer. The two stacked transistors may be positioned on two opposite sides of the isolation insulating layer, with the structure of the two stacked transistors positioned in an opposite manner. According to embodiments of the present disclosure, metal wiring layers may be connected to the two stacked transistors at their far ends, away from the isolation insulating layer. A method for manufacturing an integrated circuit semiconductor device according to the present disclosure is described. Accordingly, aspects described herein may result in reduced unit area and easy manufacture of metal wiring layer connected to the transistors.