18432290. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Semiconductor Memory Device
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432290 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a memory cell region with a first bit line in the center region, a first landing pad on the first bit line, and a first bit line capping pattern between them. Additionally, there is a second bit line on the edge region of the memory cell region, a second landing pad on the second bit line, and a second bit line capping pattern between them. The capping patterns overlap the landing pads vertically, with different distances from the top of the capping pattern to the top of the landing pad.
- Memory device with unique bit line and landing pad configuration
- Vertical overlap of bit line capping patterns and landing pads
- Differential distances between capping patterns and landing pads
- Efficient design for semiconductor memory technology
- Potential for improved memory cell performance
Potential Applications
The technology could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM.
Problems Solved
This innovation addresses issues related to memory cell performance, efficiency, and design complexity in semiconductor memory devices.
Benefits
- Enhanced memory cell performance
- Improved efficiency in memory device design
- Potential for increased data storage capacity
- Enhanced reliability and durability of memory devices
Commercial Applications
The technology could have commercial applications in the semiconductor industry for manufacturing advanced memory devices with improved performance and efficiency.
Prior Art
Readers interested in prior art related to this technology could explore patents and research papers in the field of semiconductor memory devices, specifically focusing on bit line and landing pad configurations.
Frequently Updated Research
Researchers in the field of semiconductor memory devices may be conducting studies on optimizing bit line and landing pad designs for improved memory cell performance and efficiency.
Questions about Semiconductor Memory Device
What are the key features of the unique bit line and landing pad configuration in the semiconductor memory device?
The key features include the vertical overlap of capping patterns and landing pads, differential distances between capping patterns and landing pads, and the efficient design for memory technology.
How does this innovation impact the overall performance and efficiency of semiconductor memory devices?
This innovation can enhance memory cell performance, improve design efficiency, increase data storage capacity, and enhance the reliability of memory devices.
Original Abstract Submitted
A semiconductor memory device includes a substrate including a memory cell region, a first bit line on a center region of the memory cell region, a first landing pad on the first bit line, a first bit line capping pattern between the first bit line and first landing pad, a second bit line on an edge region of the memory cell region, a second landing pad on the second bit line, and a second bit line capping pattern between the second bit line and the second landing pad. The first and second bit line capping patterns vertically overlap the first and second landing pads, respectively. A distance from the top of the first bit line capping pattern from the top of the first landing pad is greater than a distance from the top of the second bit line capping pattern to from the top of the second landing pad.
