18432064. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Cheng Chou of Keelung City (TW)
Ming-Tsung Lee of Hsinchu (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432064 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate, a low-k dielectric layer, a cap layer, and a conductive layer.
- The low-k dielectric layer is positioned on top of the substrate.
- The cap layer is placed on the low-k dielectric layer, with a higher carbon atom content compared to the low-k dielectric layer.
- The conductive layer is located within the cap layer and the low-k dielectric layer.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Addresses the need for improved semiconductor device structures with enhanced properties. - Helps in reducing power consumption and improving signal transmission in electronic devices.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Reduction in power consumption and improved signal integrity.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in the development of advanced communication systems and industrial equipment.
Questions about Semiconductor Device Technology: 1. How does the higher carbon atom content in the cap layer contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using a low-k dielectric layer in semiconductor devices?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.
