18431693. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18431693 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first semiconductor region, a second semiconductor region, a groove structure, a control insulating film, a control electrode, a first electrode, a second groove structure, and a second electrode.
- The first semiconductor region is divided into two regions by a first groove, with a control electrode embedded in the groove to control a channel in the second semiconductor region.
- The first electrode is connected to one of the regions of the first semiconductor region, while the second electrode is embedded in a second groove to form a current path via the channel between the first and second electrodes.
Potential Applications
This technology could be applied in:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
This technology helps to:
- Improve control over semiconductor channels
- Enhance the performance of semiconductor devices
Benefits
The benefits of this technology include:
- Increased efficiency in power electronics
- Enhanced functionality in integrated circuits
- Improved performance of semiconductor devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics manufacturing
- Semiconductor industry
- Research and development companies
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with similar groove structures and control electrodes
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This question is not directly addressed in the article, but further research and comparative studies could provide insights into the advantages of this technology over existing ones.
What are the potential limitations or challenges in implementing this technology on a larger scale?
While the abstract does not mention any limitations, practical challenges such as manufacturing costs and scalability could be important factors to consider in the widespread adoption of this technology.
Original Abstract Submitted
A semiconductor device includes a first conductivity type first semiconductor region formed in a region on the first main surface side in a chip, a second conductivity type second semiconductor region formed in a region on the second main surface side in the chip, a first groove structure including a first groove formed in the first main surface while passing through the first semiconductor region so as to partition the first semiconductor region into a first region and a second region as viewed in cross-section, a control insulating film that covers a wall surface of the first groove, and a control electrode embedded in the first groove while sandwiching the control insulating film so as to control a channel in the second semiconductor region, a first electrode electrically connected to the first semiconductor region in the first region, and a second groove structure including a second groove formed in the first main surface while passing through the first semiconductor region in the second region, and a second electrode embedded in the second groove so as to form a current path via the channel between the first electrode and the second electrode.
