18431676. METHODS FOR OPTIMIZING SEMICONDUCTOR DEVICE PLACEMENT ON A SUBSTRATE FOR IMPROVED PERFORMANCE, AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

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METHODS FOR OPTIMIZING SEMICONDUCTOR DEVICE PLACEMENT ON A SUBSTRATE FOR IMPROVED PERFORMANCE, AND ASSOCIATED SYSTEMS AND METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

James S. Rehmeyer of Boise ID (US)

Christopher G. Wieduwilt of Boise ID (US)

METHODS FOR OPTIMIZING SEMICONDUCTOR DEVICE PLACEMENT ON A SUBSTRATE FOR IMPROVED PERFORMANCE, AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18431676 titled 'METHODS FOR OPTIMIZING SEMICONDUCTOR DEVICE PLACEMENT ON A SUBSTRATE FOR IMPROVED PERFORMANCE, AND ASSOCIATED SYSTEMS AND METHODS

Simplified Explanation

The abstract of the patent application describes methods for optimizing the placement of memories in a memory device based on their ability to process signals from an electrical component. The memories are tested to determine their processing capabilities, labeled accordingly, and then positioned on the substrate based on these labels.

  • Testing memories to determine their ability to process signals from an electrical component
  • Labeling memories based on their processing capabilities
  • Positioning memories on the substrate based on their labels

Potential Applications

The technology described in the patent application could be applied in various electronic devices where memory optimization is crucial, such as smartphones, computers, and IoT devices.

Problems Solved

This technology solves the problem of inefficient memory placement in memory devices, ensuring that memories with better processing capabilities are positioned closer to the electrical component for optimal performance.

Benefits

The benefits of this technology include improved signal processing efficiency, enhanced overall performance of the memory device, and potentially longer lifespan of the device due to optimized memory placement.

Potential Commercial Applications

The optimized memory placement technology could be valuable for memory device manufacturers looking to improve the performance and reliability of their products. It could also be beneficial for companies developing high-performance electronic devices.

Possible Prior Art

One possible prior art for this technology could be existing methods for optimizing memory placement in electronic devices, although the specific approach described in the patent application may be novel.

Unanswered Questions

How does this technology compare to existing memory optimization methods in terms of performance and efficiency?

This article does not provide a direct comparison with existing memory optimization methods, so it is unclear how this technology stacks up against current practices.

What are the potential limitations or challenges in implementing this memory optimization technique in different types of memory devices?

The article does not address any potential limitations or challenges that may arise when implementing this memory optimization technique in various memory devices, leaving room for further exploration in this area.


Original Abstract Submitted

Methods of optimizing the placement of memories in a memory device including a substrate and an electrical component, and associated devices and systems, are disclosed herein. A representative method includes first testing the memories to determine at least one parameter for each of the memories indicating an ability of the memory to process signals from the electrical component. The method can further include labeling each memory with a label based on the parameter, the labels including at least a first label and a second label. The first label can indicate that the memories with the first label are better able to process signals from the electrical component than the memories with the second label. The method can further include electrically coupling the memories to the substrate such that the memories with the second label are positioned closer to the electrical component than the memories with the first label.