18431346. REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia Cheng Chou of Keelung City (TW)
REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18431346 titled 'REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY
Simplified Explanation
The patent application describes a structure with a first conductive feature, a first etch stop layer, a dielectric layer, and a second conductive feature. An air spacer and a protection ring are also included in the structure.
- The structure includes a first conductive feature.
- A first etch stop layer is positioned over the first conductive feature.
- A dielectric layer is placed over the first etch stop layer.
- A second conductive feature is located in the dielectric layer and the first etch stop layer.
- The second conductive feature contacts the first conductive feature.
- An air spacer surrounds the second conductive feature, with exposed sidewalls.
- A protection ring encircles the second conductive feature, fully separating it from the air spacer.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for advanced electronic devices.
Problems Solved
This innovation helps in improving the performance and reliability of electronic components by providing a protective structure around the conductive features.
Benefits
The structure offers enhanced protection and insulation for the conductive features, reducing the risk of damage and improving overall device functionality.
Potential Commercial Applications
The technology could be utilized in the production of high-performance integrated circuits and other electronic devices, catering to industries requiring advanced semiconductor technology.
Possible Prior Art
Prior art may include similar structures used in semiconductor manufacturing processes to protect and insulate conductive features within electronic devices.
Unanswered Questions
How does this technology compare to existing solutions in terms of cost-effectiveness?
The article does not provide information on the cost implications of implementing this technology compared to traditional methods.
What are the potential limitations or drawbacks of this innovation in practical applications?
The article does not address any potential limitations or challenges that may arise when implementing this technology in real-world scenarios.
Original Abstract Submitted
A structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. The second conductive feature is over and contacting the first conductive feature. An air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. A protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.
