18430902. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Munhyeon Kim of Hwaseong-si (KR)
Mingyu Kim of Hwaseong-si (KR)
Doyoung Choi of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18430902 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various components such as an active pattern, source/drain patterns, fence spacer, channel pattern, gate electrode, and gate spacer. The fence spacer has a greater thickness in one direction compared to the gate spacer in another direction.
- Active pattern on a substrate
- Source/drain patterns on the active pattern
- Fence spacer on side surfaces of the source/drain patterns
- Channel pattern between the source/drain patterns
- Gate electrode crossing the channel pattern
- Gate spacer on the side surface of the gate electrode
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as mobile devices, computers, and communication systems.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the design and structure of key components like the gate spacer and fence spacer.
Benefits
The semiconductor device with this design offers enhanced functionality, increased speed, and reduced power consumption, leading to better overall performance and user experience.
Potential Commercial Applications
The technology can be utilized in the production of high-performance integrated circuits, microprocessors, and memory chips for the consumer electronics industry.
Possible Prior Art
One possible prior art could be the use of different spacer materials or configurations in semiconductor devices to improve transistor performance and reduce leakage currents.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of power efficiency and performance?
This article does not provide a direct comparison with existing semiconductor device designs to evaluate the specific advantages in power efficiency and performance.
What are the potential challenges in implementing this technology on a large scale for mass production?
The article does not address the potential challenges that may arise in scaling up the production of semiconductor devices using this innovative design.
Original Abstract Submitted
A semiconductor device is disclosed. The semiconductor device may include an active pattern on a substrate, source/drain patterns on the active pattern, a fence spacer on side surfaces of each of the source/drain patterns, a channel pattern interposed between the source/drain patterns, a gate electrode crossing the channel pattern and extending in a first direction, and a gate spacer on a side surface of the gate electrode. A first thickness of an upper portion of the fence spacer in the first direction may be greater than a second thickness of the gate spacer in a second direction crossing the first direction.
