18429611. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Heonjong Shin of Suwon-si (KR)
Juneyoung Park of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18429611 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with various components arranged in specific directions on a substrate.
- The device has device regions extending in one horizontal direction and gate electrodes extending in another horizontal direction perpendicular to the first.
- Source/drain regions are located between pairs of gate electrodes, with gate cut regions cutting the gate electrodes.
- Contact structures, including contact body portions and contact finger portions, fill the gate cut regions.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices such as microprocessors and memory chips.
Problems Solved: - Enhances the integration and functionality of components in integrated circuits. - Improves the overall performance and reliability of electronic devices.
Benefits: - Increased speed and efficiency of electronic devices. - Higher integration density leading to smaller and more powerful devices. - Enhanced reliability and longevity of semiconductor components.
Commercial Applications: - This technology has significant commercial potential in the semiconductor industry for the production of high-performance electronic devices. - It can be utilized in the development of cutting-edge consumer electronics, telecommunications equipment, and computing devices.
Questions about the technology: 1. How does this technology impact the miniaturization of electronic devices? 2. What are the key advantages of using gate cut regions in integrated circuit design?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor manufacturing techniques and integrated circuit design to leverage the full potential of this technology.
Original Abstract Submitted
An integrated circuit device, including a substrate having a plurality of device regions extending in a first horizontal direction, a plurality of gate electrodes on the plurality of device regions extending in a second horizontal direction that is orthogonal to the first horizontal direction, a plurality of source/drain regions between a pair of gate electrodes adjacent to each other in the first horizontal direction among the plurality of gate electrodes, the plurality of source/drain regions being on portions of the plurality of device regions, a plurality of gate cut regions cutting the plurality of gate electrodes and extending in the first horizontal direction, and a plurality of contact structures including a plurality of contact body portions and a plurality of contact finger portions, the plurality of contact body portions filling the plurality of gate cut regions and extending in the first horizontal direction.
