18429515. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

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PLASMA PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Koki Hidaka of Miyagi (JP)

Koichi Kazama of Miyagi (JP)

Takanori Sato of Miyagi (JP)

Miyu Shihommatsu of Miyagi (JP)

Takehiro Kato of Miyagi (JP)

PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18429515 titled 'PLASMA PROCESSING APPARATUS

Simplified Explanation

The plasma processing apparatus described in the patent application includes a unique upper electrode assembly with a gas diffusion plate, an insulating plate, and an upper electrode plate. The insulating plate features various gas introduction holes and annular protrusions for improved gas distribution during plasma processing.

  • Gas diffusion plate, insulating plate, and upper electrode plate make up the upper electrode assembly
  • Insulating plate has annular protrusions and gas introduction holes for enhanced gas distribution
  • Upper electrode plate has first and second through holes for efficient plasma processing

Potential Applications

The technology described in this patent application could be applied in various industries such as semiconductor manufacturing, solar panel production, and display panel fabrication.

Problems Solved

This innovation addresses the challenge of uniform gas distribution during plasma processing, leading to improved process efficiency and product quality.

Benefits

The benefits of this technology include enhanced plasma processing performance, increased productivity, and higher quality end products.

Potential Commercial Applications

The technology could be commercially applied in plasma etching systems, plasma deposition equipment, and other plasma processing tools for advanced manufacturing processes.

Possible Prior Art

One possible prior art could be the use of gas diffusion plates in plasma processing equipment to improve gas distribution and processing uniformity.

Unanswered Questions

How does this technology compare to existing plasma processing apparatus in terms of gas distribution efficiency?

The patent application does not provide a direct comparison with existing plasma processing apparatus in terms of gas distribution efficiency. Further research or testing may be needed to evaluate the performance of this technology against current solutions.

What are the potential cost implications of implementing this technology in plasma processing equipment?

The patent application does not discuss the potential cost implications of implementing this technology in plasma processing equipment. A cost-benefit analysis or economic feasibility study would be necessary to determine the financial impact of adopting this innovation.


Original Abstract Submitted

A plasma processing apparatus includes a plasma processing chamber; a substrate support; a lower electrode; an RF power supply; and an upper electrode assembly. The upper electrode assembly includes a gas diffusion plate; an insulating plate; and an upper electrode plate arranged between the gas diffusion plate and the insulating plate, and having a plurality of first through holes and a plurality of second through holes. The insulating plate includes an inner annular protrusion and an outer annular protrusion protruding downward from a lower surface of the insulating plate, and the insulating plate has a plurality of first gas introduction holes, a plurality of second gas introduction holes, and a plurality of third gas introduction holes.