18428836. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)

METHODS OF FORMING MICROELECTRONIC DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

John D. Hopkins of Meridian ID (US)

Lifang Xu of Boise ID (US)

Nancy M. Lomeli of Boise ID (US)

Indra V. Chary of Boise ID (US)

Kar Wui Thong of Boise ID (US)

Shicong Wang of Meridain ID (US)

METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18428836 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES

Simplified Explanation

The patent application describes a microelectronic device with a unique stack structure that includes conductive and insulative materials arranged in tiers, separated by dielectric slot structures. Each block in the stack structure has crest regions, a stadium structure with staircase features, and bridge regions.

• The device features a stack structure with alternating conductive and insulative materials.
• Blocks in the stack are separated by dielectric slot structures.
• Each block includes crest regions, a stadium structure with staircase features, and bridge regions.
• The stadium structure has opposing staircase structures with steps made of edges of the tiers.
• Bridge regions neighbor the stadium structure and have upper surfaces coplanar with the crest regions.
• Dielectric slot structures segment the bridge regions vertically.

Key Features and Innovation

• Unique stack structure with alternating conductive and insulative materials.
• Dielectric slot structures separating blocks in the stack.
• Stadium structure with staircase features and bridge regions.
• Vertical segmentation of bridge regions by dielectric slot structures.

Potential Applications

This technology could be applied in the development of advanced memory devices, electronic systems, and other microelectronic devices requiring precise control over the arrangement of conductive and insulative materials.

Problems Solved

• Provides a structured approach to arranging conductive and insulative materials in a microelectronic device.
• Enables better control over the electrical properties and performance of the device.

Benefits

• Improved performance and efficiency of microelectronic devices.
• Enhanced reliability and durability of memory devices and electronic systems.

Commercial Applications

Advanced memory devices, high-performance electronic systems, and innovative microelectronic devices could benefit from this technology, potentially leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Prior Art

Readers interested in exploring prior art related to this technology may consider researching patents and publications in the field of microelectronic device design, stack structures, and dielectric slot structures.

Frequently Updated Research

Researchers and developers in the field of microelectronics may find it valuable to stay updated on advancements in stack structure design, dielectric materials, and memory device technologies to further enhance the capabilities of this innovative microelectronic device.

Questions about Microelectronic Device Innovation

What are the potential applications of the unique stack structure described in the patent application?

The unique stack structure could find applications in memory devices, electronic systems, and other microelectronic devices requiring precise control over the arrangement of conductive and insulative materials.

How does the vertical segmentation of bridge regions by dielectric slot structures contribute to the performance of the microelectronic device?

The vertical segmentation of bridge regions helps in better control over the electrical properties and performance of the device by providing a structured approach to arranging conductive and insulative materials.

Original Abstract Submitted

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive material and insulative material arranged in tiers. The stack structure has blocks separated from one another by first dielectric slot structures. Each of the blocks comprises two crest regions, a stadium structure interposed between the two crest regions in a first horizontal direction and comprising opposing staircase structures each having steps comprising edges of the tiers of the stack structure, and two bridge regions neighboring opposing sides of the stadium structure in a second horizontal direction orthogonal to the first horizontal direction and having upper surfaces substantially coplanar with upper surfaces of the two crest regions. At least one second dielectric slot structure is within horizontal boundaries of the stadium structure in the first horizontal direction and partially vertically extends through and segmenting each of the two bridge regions. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.