18428264. VERTICAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
VERTICAL SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
Younghwan Son of Suwon-si (KR)
Kohji Kanamori of Suwon-si (KR)
VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18428264 titled 'VERTICAL SEMICONDUCTOR DEVICES
The abstract describes a vertical semiconductor device with a stacked structure and multiple channel structures. The stacked structure consists of insulation layers and gate patterns stacked alternately on a substrate, extending parallel to the substrate's upper surface. The gate patterns include first gate patterns with sacrificial patterns between them. The channel structures pass through the stacked structure, each extending to the substrate's upper surface and containing a charge storage structure and a channel.
- The device has a stacked structure with insulation layers and gate patterns stacked alternately on a substrate.
- Gate patterns include first gate patterns with sacrificial patterns between them.
- Channel structures pass through the stacked structure, extending to the substrate's upper surface.
- Each channel structure contains a charge storage structure and a channel.
- Some channel structures pass through the sacrificial pattern in the stacked structure to the substrate's upper surface.
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuits
Problems Solved: - Enhancing semiconductor device performance - Increasing memory storage capacity - Improving charge retention in memory devices
Benefits: - Higher performance in semiconductor devices - Increased memory storage capacity - Enhanced charge retention for improved device functionality
Commercial Applications: Vertical semiconductor devices with improved performance and memory storage capacity can be utilized in various industries such as electronics, telecommunications, and computing. These devices can enhance the efficiency and functionality of memory modules, processors, and other semiconductor components.
Questions about Vertical Semiconductor Devices: 1. How do vertical semiconductor devices differ from traditional horizontal semiconductor devices? Vertical semiconductor devices have a stacked structure with channel structures passing through them, allowing for increased performance and memory storage capacity compared to traditional horizontal devices.
2. What are the key advantages of using vertical semiconductor devices in memory applications? Vertical semiconductor devices offer higher performance, increased memory storage capacity, and improved charge retention, making them ideal for memory-intensive applications in various industries.
Original Abstract Submitted
A vertical semiconductor device may include a stacked structure and a plurality of channel structures. The stacked structure may include insulation layers and gate patterns alternately and repeatedly stacked on a substrate. The stacked structure may extend in a first direction parallel to an upper surface of the substrate. The gate patterns may include at least ones of first gate patterns. The stacked structure may include a sacrificial pattern between the first gate patterns. The channel structures may pass through the stacked structure. Each of the channel structures may extend to the upper surface of the substrate, and each of the channel structures may include a charge storage structure and a channel. Ones of the channel structures may pass through the sacrificial pattern in the stacked structure to the upper surface of the substrate, and may extend to the upper surface of the substrate.
