18428230. METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chung-Shu Wu of Taoyuan City (TW)

Shu-Uei Jang of Hsinchu City (TW)

Wei-Yeh Tang of Taoyuan City (TW)

Ryan Chia-Jen Chen of Hsinchu (TW)

An-Chyi Wei of Hsinchu City (TW)

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18428230 titled 'METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

Simplified Explanation

The abstract describes a method for forming a FinFET device structure, including a first fin structure with a liner layer and a gate dielectric layer aligned with the liner layer.

• The method involves creating a first fin structure extending above a substrate.
• A first liner layer is then formed on a sidewall surface of the first fin structure.
• A gate dielectric layer is formed over the first fin structure and the first liner layer, with the sidewall surface of the gate dielectric layer aligned with the sidewall surface of the first liner layer.

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for the manufacturing of advanced FinFET devices with improved performance and efficiency.

Problems Solved

This technology addresses the challenge of enhancing the performance and functionality of FinFET devices by providing a method for precise alignment of the gate dielectric layer with the liner layer on the fin structure.

Benefits

The benefits of this technology include improved control over the device structure, leading to enhanced electrical properties, reduced leakage, and increased overall performance of FinFET devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and other consumer electronics.

Possible Prior Art

One possible prior art in this field could be the development of methods for fabricating FinFET devices with optimized gate dielectric layers and liner structures to improve device performance and reliability.

How does this method compare to existing techniques for forming FinFET device structures?

This article does not provide a direct comparison with existing techniques for forming FinFET device structures. Further research or a comparative study would be needed to evaluate the advantages and limitations of this method in relation to other approaches.

What are the specific performance improvements achieved by aligning the gate dielectric layer with the liner layer in the FinFET device structure?

The article does not delve into the specific performance improvements resulting from the alignment of the gate dielectric layer with the liner layer. Additional testing and analysis would be required to quantify the impact on device characteristics and functionality.

Original Abstract Submitted

A method for forming a FinFET device structure is provided. The FinFET device structure includes a first fin structure extending above a substrate, and a first liner layer formed on a first sidewall surface of the first fin structure. The FinFET device structure includes a gate dielectric layer formed over the first fin structure and the first liner layer, wherein a sidewall surface of the gate dielectric layer is aligned with a sidewall surface of the first liner layer.