18427508. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoshihito Ichikawa of Matsumoto-city (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18427508 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application features a gate runner with a first polysilicon layer connected to a gate pad through a built-in gate resistor made of a second polysilicon layer. The device also includes a third polysilicon layer beneath the gate pad, separated from the first polysilicon layer by an insulation layer. The surface of the insulation layer between the first and third polysilicon layers is covered by a gate metal wiring layer of the gate runner.
- The semiconductor device includes a gate runner with a unique structure involving multiple polysilicon layers.
- The gate resistor is built-in and constituted by a second polysilicon layer.
- The third polysilicon layer beneath the gate pad is separated from the first polysilicon layer by an insulation layer.
- The surface of the insulation layer between the first and third polysilicon layers is covered by a gate metal wiring layer.
- The device ensures that the potential of the gate metal wiring layer is fixed when pn junctions beneath the gate pad are reverse biased.
Potential Applications: This technology could be applied in the semiconductor industry for the development of advanced integrated circuits, particularly in the design of high-performance and efficient semiconductor devices.
Problems Solved: 1. Improved electrical connection between the gate runner and gate pad. 2. Enhanced performance and reliability of semiconductor devices. 3. Efficient management of potential differences within the device.
Benefits: 1. Enhanced electrical connectivity and signal transmission. 2. Improved overall performance and reliability of semiconductor devices. 3. Better control of potential differences and electrical properties.
Commercial Applications: The technology could find applications in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It could also be utilized in the automotive industry for advanced vehicle electronics.
Questions about Semiconductor Devices: 1. How does the unique structure of the gate runner contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using multiple polysilicon layers in the construction of semiconductor devices?
Original Abstract Submitted
A semiconductor device having a first polysilicon layer of a gate runner that is electrically connected to a gate pad via a built-in gate resistor constituted by a second polysilicon layer, and has a potential lower than that of the gate pad. The first polysilicon layer is disposed apart from a third polysilicon layer. The third polysilicon layer directly beneath the gate pad and the first polysilicon layer are apart from each other and face each other across an insulation layer in a direction parallel to a front surface of a semiconductor substrate. The surface of a portion of the insulation layer between the first and third polysilicon layers that are adjacent to each other is covered by a gate metal wiring layer of the gate runner, and is fixed to the potential of the gate metal wiring layer when pn junctions directly beneath the gate pad are reverse biased.
