18426507. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tomohiro Moriya of Matsumoto-city (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18426507 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
The abstract describes a silicon carbide semiconductor device with specific structural elements and configurations.
- The device includes a drift layer, a semiconductor region, insulating films, a wiring layer, and a gate pad.
- The semiconductor region consists of a first region with a 4H structure and a second region with a 3C structure.
- The first region overlaps with the wiring layer in the depth direction.
- The gate pad is electrically connected to the wiring layer.
Potential Applications:
- Power electronics
- High-frequency applications
- Electric vehicles
- Renewable energy systems
Problems Solved:
- Improved performance and efficiency in power electronics
- Enhanced reliability and durability in high-power applications
Benefits:
- Higher efficiency and power handling capabilities
- Increased reliability and longevity
- Better thermal management
Commercial Applications:
- Power converters
- Electric vehicle components
- Solar inverters
- Industrial motor drives
Questions about Silicon Carbide Semiconductor Devices: 1. How does the 4H structure in the semiconductor region contribute to the device's performance? 2. What advantages does the 3C structure in the second region provide in terms of functionality and efficiency?
Frequently Updated Research: Ongoing research focuses on optimizing the design and manufacturing processes of silicon carbide semiconductor devices to further enhance their performance and reliability.
Original Abstract Submitted
A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a semiconductor region of a second conductivity-type provided on a top surface side of the drift layer in an intermediate part between an active part and an edge termination part; a first insulating film provided on a top surface of the semiconductor region; a wiring layer provided on a top surface of the first insulating film; a second insulating film provided on a top surface of the wiring layer; and a gate pad provided on a top surface of the second insulating film so as to be electrically connected to the wiring layer, wherein the semiconductor region includes a first region having a 4H structure overlapping with at least a part of the wiring layer in a depth direction, and a second region having a 3C structure provided on a top surface side of the first region.
