18426010. DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jen-Hong Chang of Hsinchu (TW)

Yuan-Ching Peng of Hsinchu (TW)

Chung-Ting Ko of Kaohsiung City (TW)

Kuo-Yi Chao of Hsinchu (TW)

Chia-Cheng Chao of Hsinchu (TW)

You-Ting Lin of Miaoli County (TW)

Chih-Chung Chang of Nantou County (TW)

Yi-Hsiu Liu of Hsinchu (TW)

Jiun-Ming Kuo of Taipei City (TW)

Sung-En Lin of Hsinchu (TW)

DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18426010 titled 'DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS

The patent application describes a method for forming semiconductor structures, including the formation of fin-like structures and isolation features.

• Formation of a stack of epitaxial layers over a substrate
• Creation of first and second fin-like structures from the stack
• Introduction of an isolation feature between the fin-like structures
• Deposition of a cladding layer over the structures
• Conformal deposition of dielectric layers over the cladding layer
• Planarization of the dielectric layers to expose the cladding layer
• Etching of the second dielectric layer to create a helmet recess
• Trimming of the first dielectric layer to widen the helmet recess
• Deposition of a helmet feature in the widened helmet recess

Potential Applications: - Advanced semiconductor manufacturing - High-performance electronic devices - Nanotechnology research

Problems Solved: - Improved integration of fin-like structures in semiconductor devices - Enhanced isolation between components - More precise control over device features

Benefits: - Increased efficiency in semiconductor fabrication - Higher performance and reliability of electronic devices - Potential for miniaturization and improved functionality

Commercial Applications: Title: "Innovative Semiconductor Manufacturing Method for Enhanced Device Performance" This technology could revolutionize the production of high-performance electronic devices, leading to advancements in smartphones, computers, and other consumer electronics. The method's precision and efficiency make it highly attractive for semiconductor manufacturers looking to stay competitive in the market.

Frequently Updated Research: Ongoing research in semiconductor materials and manufacturing processes could further enhance the capabilities of this method. Stay updated on the latest developments in semiconductor technology to leverage the full potential of this innovation.

Questions about Semiconductor Manufacturing Method:

1. How does this method compare to traditional semiconductor fabrication techniques? This method offers improved precision and control over device features, leading to enhanced performance and reliability compared to traditional techniques.

2. What are the potential challenges in implementing this semiconductor manufacturing method on an industrial scale? Scaling up this method for mass production may require optimization of process parameters and equipment to ensure consistent results across large batches of semiconductor devices.

Original Abstract Submitted

Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.