18425797. SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shi-Ning Ju of Hsin Chiu City (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
Kuan-Lun Cheng of Tainan City (TW)
Chih-Hao Wang of Baoshan Township (TW)
SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18425797 titled 'SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
The semiconductor device structure described in the patent application consists of multiple semiconductor nanostructures with a gate stack wrapped around them. Additionally, the structure includes a first epitaxial structure and a second epitaxial structure sandwiching some of the semiconductor nanostructures, along with an isolation structure that extends across the edges of the nanostructures.
- The semiconductor device structure features multiple semiconductor nanostructures.
- A gate stack is wrapped around the semiconductor nanostructures.
- The structure includes a first epitaxial structure and a second epitaxial structure sandwiching the nanostructures.
- An isolation structure extends continuously across the edges of the semiconductor nanostructures.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the fields of nanotechnology, integrated circuits, and microelectronics.
Problems Solved: - Provides a more efficient and effective way to structure semiconductor devices. - Enhances the performance and functionality of semiconductor devices.
Benefits: - Improved performance and functionality of semiconductor devices. - Enhanced efficiency in semiconductor device manufacturing processes.
Commercial Applications: Title: Advanced Semiconductor Device Structure for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to advancements in consumer electronics, telecommunications, and computing industries.
Prior Art: Readers can explore prior research on semiconductor nanostructures, gate stack technology, epitaxial structures, and isolation structures in semiconductor devices to gain a deeper understanding of the field.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device structures, nanostructure fabrication techniques, and epitaxial growth methods to remain at the forefront of technological innovation.
Questions about Semiconductor Device Structures: 1. What are the key advantages of using semiconductor nanostructures in device fabrication?
- Semiconductor nanostructures offer unique electronic properties due to their size, leading to improved device performance and efficiency.
2. How does the gate stack contribute to the functionality of semiconductor devices?
- The gate stack controls the flow of current in the semiconductor device, enabling precise operation and functionality.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. The semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.
