18425058. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Semiconductor Device and Method

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yoh-Rong Liu of Taipei City (TW)

Wen-Kai Lin of Yilan County (TW)

Che-Hao Chang of Hsinchu (TW)

Chi On Chui of Hsinchu (TW)

Yung-Cheng Lu of Hsinchu (TW)

Li-Chi Yu of Jhubei City (TW)

Sen-Hong Syue of Zhubei City (TW)

Semiconductor Device and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 18425058 titled 'Semiconductor Device and Method

The method described in the patent application involves manufacturing a semiconductor device by forming a multi-layer stack of alternating layers of different semiconductor materials on a substrate, creating a recess through the stack, and laterally recessing the sidewalls of the layers. Inner spacers are then formed with seams adjacent to the recessed layers, followed by an anneal treatment to close the seams.

• Formation of a multi-layer stack of alternating semiconductor materials
• Creation of a recess through the stack
• Lateral recessing of sidewalls of the layers
• Formation of inner spacers with seams adjacent to the recessed layers
• Anneal treatment to close the seams

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices such as transistors, diodes, and integrated circuits.

Problems Solved

This method addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the structure of the multi-layer stack.

Benefits

The method allows for precise control over the semiconductor device's structure, leading to enhanced performance, reliability, and functionality.

Commercial Applications

This innovation has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices for various applications such as telecommunications, computing, and automotive systems.

Prior Art

Prior research in semiconductor manufacturing techniques may provide insights into similar methods or technologies used in the industry.

Frequently Updated Research

Researchers are continually exploring new materials and processes to further enhance the performance and capabilities of semiconductor devices.

Questions about Semiconductor Device Manufacturing

What are the key challenges in semiconductor device manufacturing?

Semiconductor device manufacturing faces challenges such as increasing complexity, shrinking feature sizes, and the need for higher performance.

How does the method of forming inner spacers improve semiconductor device performance?

The formation of inner spacers with seams helps to optimize the structure of the semiconductor device, leading to improved functionality and reliability.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.