18424246. SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsin-Yen Huang of Hsinchu (TW)
Cheng-Chin Lee of Hsinchu (TW)
Hsiao-Kang Chang of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18424246 titled 'SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor structure with air gaps by following these steps:
- Preparing a dielectric structure with trenches
- Forming spacer layers on the lateral surfaces of the dielectric structure
- Filling the trenches with an electrically conductive material to create features
- Depositing a blocking layer on the dielectric structure
- Depositing a dielectric material on the electrically conductive features to form a capping layer
- Removing the blocking layer and dielectric structure to create recesses
- Creating sacrificial features in the recesses
- Forming a sustaining layer to cover the sacrificial features
- Removing the sacrificial features to obtain the semiconductor structure with air gaps confined by the sustaining layer and spacer layers.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits and memory chips.
Problems Solved
This method solves the problem of reducing parasitic capacitance in semiconductor structures, which can improve the overall performance and efficiency of electronic devices.
Benefits
The use of air gaps in the semiconductor structure can help in reducing signal interference, improving signal integrity, and enhancing the overall speed and reliability of electronic devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with improved performance and efficiency.
Possible Prior Art
One possible prior art in this field could be the use of sacrificial layers in semiconductor manufacturing processes to create voids or air gaps in the structures.
Unanswered Questions
How does this technology compare to existing methods for reducing parasitic capacitance in semiconductor structures?
This article does not provide a direct comparison with existing methods for reducing parasitic capacitance in semiconductor structures. It would be interesting to know if this method is more effective or efficient than current techniques.
What are the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing facilities?
The article does not address the challenges or limitations of implementing this technology on a large scale. It would be important to understand any potential obstacles that could arise during the industrial-scale application of this method.
Original Abstract Submitted
A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.
