18424171. Efficient Pin Phase Shifters simplified abstract (Apple Inc.)

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Efficient Pin Phase Shifters

Organization Name

Apple Inc.

Inventor(s)

Jason S. Pelc of Sunnyvale CA (US)

Wei Liu of Mountain View CA (US)

Efficient Pin Phase Shifters - A simplified explanation of the abstract

This abstract first appeared for US patent application 18424171 titled 'Efficient Pin Phase Shifters

Simplified Explanation: The patent application describes photonic integrated circuits with a carrier-based phase shifter, specifically a PIN phase shifter with a waveguide formed from a strip extending from a slab waveguide.

Key Features and Innovation:

  • Carrier-based phase shifter with a PIN structure
  • Waveguide formed from a strip extending from a slab waveguide
  • First set of doping regions in the slab waveguide
  • Second set of doping regions in the strip
  • Different conductivity types for the two sets of doping regions

Potential Applications: This technology could be used in telecommunications, optical networking, and data transmission systems.

Problems Solved: The technology addresses the need for efficient and compact phase shifters in photonic integrated circuits.

Benefits:

  • Improved performance in photonic integrated circuits
  • Enhanced signal processing capabilities
  • Compact and cost-effective design

Commercial Applications: Potential commercial applications include telecommunications equipment, optical networking devices, and data communication systems.

Questions about Photonic Integrated Circuits with Carrier-Based Phase Shifter: 1. How does the carrier-based phase shifter improve signal processing in photonic integrated circuits? 2. What are the advantages of using a PIN structure in the phase shifter design?

Frequently Updated Research: Researchers are constantly exploring new materials and fabrication techniques to enhance the performance of photonic integrated circuits with carrier-based phase shifters.


Original Abstract Submitted

Embodiments are directed to photonic integrated circuits that include a carrier-based phase shifter. The carrier-based phase shifter is configured as a PIN phase shifter with a waveguide formed from a strip extending from a slab waveguide. The PIN phase shifter includes a first set of doping regions positioned in a slab waveguide and a second set of doping regions positioned the strip. Each of the first set of doping regions has a first conductivity type, and each of the second set of doping regions has a second conductivity type that is different that the first conductivity type.