18423769. Phase-Change Memory Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 Phase-Change Memory Device and Method
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Phase-Change Memory Device and Method - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Phase-Change Memory Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shao-Ming Yu of Zhubei City (TW)
Phase-Change Memory Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18423769 titled 'Phase-Change Memory Device and Method
Simplified Explanation
The method described in the abstract involves the formation of a dielectric layer over a substrate, followed by the etching of an opening in the dielectric layer. A bottom electrode, including a barrier layer, is then formed within the opening. A phase-change material (PCM) layer is subsequently formed within the opening and on the bottom electrode, with the top surface of the PCM layer being level with or below the top surface of the dielectric layer. Finally, a top electrode is formed on the PCM layer.
- Dielectric layer formed over substrate
- Opening etched in dielectric layer
- Bottom electrode with barrier layer formed in opening
- PCM layer formed in opening and on bottom electrode
- Top electrode formed on PCM layer
Potential Applications
The technology described in this patent application could be applied in the development of non-volatile memory devices, such as phase-change memory (PCM) devices.
Problems Solved
This technology solves the problem of efficiently integrating phase-change materials into memory devices, ensuring proper functionality and performance.
Benefits
The benefits of this technology include improved memory device performance, enhanced data storage capabilities, and potentially lower power consumption compared to traditional memory technologies.
Potential Commercial Applications
"Enhancing Memory Devices with PCM Technology"
Possible Prior Art
There may be prior art related to the integration of phase-change materials in memory devices, as PCM technology has been a subject of research and development in the semiconductor industry for some time.
Unanswered Questions
How does this technology compare to other memory technologies in terms of speed and reliability?
This article does not provide a direct comparison between this technology and other memory technologies in terms of speed and reliability.
What are the potential challenges in scaling up this technology for mass production?
This article does not address the potential challenges in scaling up this technology for mass production.
Original Abstract Submitted
A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.
