18423738. INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chansyun David Yang of Shinchu (TW)

Keh-Jeng Chang of Hsinchu (TW)

Chan-Lon Yang of Taipei City (TW)

INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18423738 titled 'INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a first fin structure, an isolation structure, a substrate layer, an epitaxial layer, and a second fin structure.

  • The first fin structure is a key component of the semiconductor device.
  • The isolation structure is in contact with the top surface of the first fin structure.
  • The substrate layer is in contact with the isolation structure.
  • The epitaxial layer is in contact with the isolation structure and the substrate layer.
  • The second fin structure is above the first fin structure and in contact with the epitaxial layer.

Potential Applications

The technology described in this patent application could be applied in the following areas:

  • Semiconductor manufacturing
  • Integrated circuits
  • Electronic devices

Problems Solved

This technology helps address the following issues:

  • Enhancing semiconductor device performance
  • Improving efficiency in electronic devices
  • Increasing integration density in integrated circuits

Benefits

The benefits of this technology include:

  • Higher performance in semiconductor devices
  • Improved reliability in electronic devices
  • Enhanced functionality in integrated circuits

Potential Commercial Applications

With its various advantages, this technology could find commercial applications in:

  • Consumer electronics
  • Telecommunications
  • Automotive industry

Possible Prior Art

One possible prior art related to this technology is the use of fin structures in semiconductor devices to improve performance and efficiency.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This question can be answered through comparative studies and benchmarking tests between the new technology and existing solutions.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

This question requires further research and analysis of the scalability and feasibility of integrating this technology into mass production processes.


Original Abstract Submitted

The present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.

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